InGaAs APD Wafers

InGaAs APD Wafers

PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging systems. The specifications and parameters of InGaAs APD wafers are as follows:

PAM-210331-INGAAS-APD

Item 1:

LayerMaterialThickness (μm)Deviationconcentration (cm-3)DeviationTestNote
9U-1.05μm InGaAsP±10%±20%
8N-InP2.55E+15±20%C-VOn test wafer
7N-InP±0.01C-VOn test wafer
6N-1.05μm InGaAsP0.03
5N-1.25μm InGaAsP±10%
4N-1.45μm InGaAsP±10%2E+16
3N-InGaAs±0.01±10%
2U-InGaAs2.5< 1E+15DCXD &C-VOn epiwafer & test wafer
1N-InP±10%±20%C-VOn test wafer
0N-InP Substrate350±25S-doped >3E+182″ wafer
#Lattice Mismatch<±100ppmDCXDTest on center of epiwafer

 

Item 2:

LayerMaterialThickness (μm)Deviationconcentration (cm-3)DeviationTestNote
9U-1.05μm InGaAsP0.1±10%±20%
8N-InP±0.12±20%C-VOn test wafer
7N-InP0.2C-VOn test wafer
6N-1.05μm InGaAsP2E+16
5N-1.25μm InGaAsP±10%
4N-1.45μm InGaAsP0.03±10%
3N-InGaAs0.11E+16±10%
2U-InGaAs±10%DCXD &C-VOn epiwafer & test wafer
1N-InP0.5±20%C-VOn test wafer
0N-InP Substrate350±25S-doped >3E+182″ wafer
#Lattice Mismatch<±100ppmDCXDTest on center of epiwafer

 

Item 3:

LayerMaterialThickness (μm)Deviationconcentration (cm-3)DeviationTestNote
9U-1.05μm InGaAsP0.15E+15±20%
8N-InP±20%C-VOn test wafer
7N-InP0.2±0.01C-VOn test wafer
6N-1.05μm InGaAsP±10%
5N-1.25μm InGaAsP0.03
4N-1.45μm InGaAsP2E+16
3N-InGaAs±0.01±10%
2U-InGaAs2.5< 1E+15DCXD &C-VOn epiwafer & test wafer
1N-InP±10%±20%C-VOn test wafer
0N-InP Substrate350±25S-doped >3E+182″ wafer
#Lattice Mismatch<±100ppmDCXDTest on center of epiwafer

For more information, please contact us email at [email protected] and [email protected].

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