InGaAs APD Wafers

InGaAs APD Wafers

PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging systems. The specifications and parameters of InGaAs APD wafers are as follows:

PAM-210331-INGAAS-APD

Item 1:

Layer Material Thickness (μm) Deviation concentration (cm-3) Deviation Test Note
9 U-1.05μm InGaAsP ±10% ±20%
8 N-InP 2.5 5E+15 ±20% C-V On test wafer
7 N-InP ±0.01 C-V On test wafer
6 N-1.05μm InGaAsP 0.03
5 N-1.25μm InGaAsP ±10%
4 N-1.45μm InGaAsP ±10% 2E+16
3 N-InGaAs ±0.01 ±10%
2 U-InGaAs 2.5 < 1E+15 DCXD &C-V On epiwafer & test wafer
1 N-InP ±10% ±20% C-V On test wafer
0 N-InP Substrate 350±25 S-doped >3E+18 2″ wafer
# Lattice Mismatch <±100ppm DCXD Test on center of epiwafer

 

Item 2:

Layer Material Thickness (μm) Deviation concentration (cm-3) Deviation Test Note
9 U-1.05μm InGaAsP 0.1 ±10% ±20%
8 N-InP ±0.12 ±20% C-V On test wafer
7 N-InP 0.2 C-V On test wafer
6 N-1.05μm InGaAsP 2E+16
5 N-1.25μm InGaAsP ±10%
4 N-1.45μm InGaAsP 0.03 ±10%
3 N-InGaAs 0.1 1E+16 ±10%
2 U-InGaAs ±10% DCXD &C-V On epiwafer & test wafer
1 N-InP 0.5 ±20% C-V On test wafer
0 N-InP Substrate 350±25 S-doped >3E+18 2″ wafer
# Lattice Mismatch <±100ppm DCXD Test on center of epiwafer

 

Item 3:

Layer Material Thickness (μm) Deviation concentration (cm-3) Deviation Test Note
9 U-1.05μm InGaAsP 0.1 5E+15 ±20%
8 N-InP ±20% C-V On test wafer
7 N-InP 0.2 ±0.01 C-V On test wafer
6 N-1.05μm InGaAsP ±10%
5 N-1.25μm InGaAsP 0.03
4 N-1.45μm InGaAsP 2E+16
3 N-InGaAs ±0.01 ±10%
2 U-InGaAs 2.5 < 1E+15 DCXD &C-V On epiwafer & test wafer
1 N-InP ±10% ±20% C-V On test wafer
0 N-InP Substrate 350±25 S-doped >3E+18 2″ wafer
# Lattice Mismatch <±100ppm DCXD Test on center of epiwafer

For more information, please contact us email at [email protected] and [email protected].

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