After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]
2021-04-02meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2005
Intrinsic Si:-
[100]
2″
280 ±10
P/E
FZ >8,500
SEMI Prime, 1Flat, TTV<5μm, hard cst
PAM2006
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000–10,000
SEMI Prime, 1Flat, hard cst
PAM2007
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000–10,000
SEMI Prime, 1Flat, in hard cassettes of 2 & 5 wafers
PAM2008
Intrinsic Si:-
[111] [...]
2019-02-18meta-author
PAM XIAMEN offers Mg – Metal Foil.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg ) [...]
2019-05-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
PAM XIAMEN offers 4″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Sealed in Empak cassette.
Primary Flat: 32.5±-2.5, 110±1°。
Secondary Flat: 18±2,90°±5°
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
Abstract
We report on a systematic study of local structural, magnetic and magneto-optical properties of Mn-doped SiC films synthesized on a 3C–SiC(001) homoepitaxial wafer by an annealing method. A thin Mn layer was deposited on the SiC wafer, and then annealing was performed to diffuse [...]
2017-06-02meta-author