Coulometric determination of arsenic in gallium arsenide crystal wafers
The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
PAM-02A2 series detectors are super small sized detectors based on planar CZT. They can detect α-ray, γ-ray and β-ray simultaneously.
PAM-02A2 integrates CZT crystal, low noise charge preamplifier circuit, SK shaping circuit and high-voltage circuit. With ordered cable, it can output Quasi-gaussian signal or [...]
2019-04-23meta-author
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
2012-11-09meta-author
PAM XIAMEN offers GaAs (100) Te-doped crystal .
GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
2019-04-22meta-author
The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
2020-01-13meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author