Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
PAM-XIAMEN is a reliable supplier of semiconductor materials, offering element semiconductor wafers, wide or narrow bandgap semiconductor wafers to research institutes, universities, and related enterprise. More wafer specifications please see https://www.powerwaywafer.com/products.html.
PAM-XIAMEN has compiled top 20 publications in Condensed Matter Physics & Semiconductors in [...]
2022-08-29meta-author
PAM XIAMEN offers Single crystal CdWO4.
CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes.
Structure
Lattice (A)
Melting Point oC
Density g/cm
Hardness (Mohn)
Thermo expansion
Refractive indexEmission wavelength (nm )
Emission wavelength [...]
2019-04-18meta-author
PAM-XIAMEN provides GaAs epiwafer for MESFET devices, which is one FET epitaxial structure with modulated doping. Detailed epitaxial growth heterostructure is listed below for your reference. The electron migration rate of GaAs is 5.7 times higher than that of silicon, which is very suitable [...]
2022-12-09meta-author
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions
We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]