GaAs Epiwafer

PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

  • Description

Product Description

GaAs Epi wafer 

As a leading GaAs epi wafer foundry, PAM-XIAMEN are manufacturing various types of epiwafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, which make a low gallium arsenide epi wafer defect. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

We have numbers of the United States Veeco’s GEN2000, GEN200 large-scale production of epitaxial equipment production line, full set of XRD; PL-Mapping; Surfacescan, and other world-class analysis and testing equipment. The company has more than 12,000 square meters of supporting plant, including world class super-clean semiconductor and a related research and development of the younger generation of clean laboratory facilities.

Specification for all new and featured products of MBE III-V compound semiconductor epitaxial wafer:

Substrate Material Material Capability Application
GaAs low temperature GaAs THz
GaAs GaAs/GaAlAs/GaAs/GaAs Schottky Diode
InP InGaAs PIN detector
InP InP/InP/InGaAsP/InP/InGaAs Laser
GaAs GaAs/AlAs/GaAs  
InP InP/InAsP/InGaAs/InAsP  
GaAs GaAs/InGaAsN/AlGaAs  
/GaAs/AlGaAs
InP InP/InGaAs/InP photodetectors
InP InP/InGaAs/InP  
InP InP/InGaAs  
GaAs GaAs/InGaP/GaAs/AlInP Solar Cell
/InGaP/AlInP/InGaP/AlInP
GaAs GaAs/GaInP/GaInAs/GaAs/AlGaAs/GalnP/GalnAs Solar Cell
/GalnP/GaAs/AlGaAs/AllnP/GalnP/AllnP/GalnAs
InP InP/GaInP  
GaAs GaAs/AlInP  
GaAs GaAs/AlGaAs/GalnP/AlGaAs/GaAs 703nm Laser
GaAs GaAs/AlGaAs/GaAs  
GaAs GaAs/AlGaAs/GaAs/AlGaAs/GaAs HEMT
GaAs GaAs/AlAs/GaAs/AlAs/GaAs mHEMT
GaAs GaAs/DBR/AlGaInP/MQW/AlGaInP/GaP LED wafer,solid state lighting
GaAs GaAs/GalnP/AlGaInP/GaInP 635nm,660nm,808nm,780nm, 785nm,
/GaAsP/GaAs/GaAs substrate  950nm, 1300nm,1550nm Laser
GaSb AlSb/GaInSb/InAs IR detector,PIN,sensing, IR cemera
silicon InP or GaAs on Silicon High speed IC/microprocessors
InSb Beryllium doped InSb  
/ undoped InSb/Te doped InSb/

 

Gallium arsenide is currently one of the most important compound semiconductor materials with the highest mature epi wafer technology. GaAs material has the characteristics of large forbidden band width, high electron mobility, direct band gap, high luminous efficiency. Due to all all these epi wafer advantages, GaAs epitaxy is currently the most important material used in the field of optoelectronics. Meanwhile, it is also an important microelectronic material. According to the difference in electrical conductivity, GaAs epi wafer materials can be divided into semi-insulating (SI) GaAs and semiconductor (SC) GaAs.

In the field of epitaxial wafers, the epi wafer market share of RF and laser applications is very large.

 

For more detail specification, please review the following:

LT-GaAs epi layer on GaAs substrate

LT GaAs Thin Film for Photodetectors and Photomixers

Low Temperature Grown InGaAs 

GaAs Schottky Diode Epitaxial Wafers

InGaAs/InP epi wafer for PIN

InGaAsP/InGaAs on InP substrates

InGaAs APD Wafers with High Performance

 

GaAs/AlAs wafer

InGaAsN epitaxially on GaAs or InP wafers

Structure for InGaAs photodetectors

InP/InGaAs/InP epi wafer

 InGaAs Structure Wafer

AlGaP/GaAs Epi Wafer for Solar Cell

Triple-junction solar cells

Solar Cell Structure Epitaxially Grown on InP Wafer

GaAs Epitaxy

GaInP/InP epi wafer

AlInP/GaAs epi wafer

Growth of GaAsSb / InGaAs Type-II Superlattice

 

Layer structure of 703nm Laser

808nm laser wafers

780nm laser wafers

 

GaAs PIN epi wafer

AlGaAs / GaAs PIN Epitaxial Wafer

1550nm GaInAsP / InP PIN Photodiode Structure

InGaAs Photodiode Structure

GaAs/AlGaAs/GaAs epi wafer

GaAs HBT Epi Wafer

GaAs Based Epitaxial Wafer for LED and LD, please see below desc.
GaAs pHEMT epi wafer (GaAs, AlGaAs, InGaAs), please see below desc.
GaAs mHEMT epi wafer (mHEMT: metamorphic high electron mobility transistor)
GaAs HBT epi wafer (GaAs HBT is bipolar junction transistors, which are composed of at least two different semiconductors,which is by GaAs based technology.)Metal-semiconductor field effect transistor (MESFET)
 
Heterojunction field effect transistor (HFET)
High electron mobility transistor (HEMT)
Pseudomorphic high electron mobility transistor (pHEMT)
Resonant tunnel diode (RTD)
PiN diode
hall effect devices
variable capacitance diode (VCD)
GaAs substrate, 50 nm of InAlP, and then 2.5 microns of GaAs PAM210406-INALP

 

Now we list some specifications:

GaAs HEMT epiwafer, size:2~6inch
 Item    Specifications   Remark
Parameter Al composition/In composition/Sheet resistance Please contact our tech department
Hall mobility/2DEG Concentration
Measurement tech X-ray diffraction/Eddy current Please contact our tech department
Un-contact hall
Typical valve Struture dependent Please contact our tech department
5000~6500cm2/V ·S/0.5~1.0x 1012cm-2
Standard tolerance ±0.01/±3%/none Please contact our tech department
GaAs(gallium arsenide) pHEMT epiwafer, size:2~6inch
 Item    Specifications   Remark
Parameter Al composition/In composition/Sheet resistance Please contact our tech department
Hall mobility/2DEG Concentration
Measurement tech X-ray diffraction/Eddy current Please contact our tech department
Un-contact hall
Typical valve Struture dependent Please contact our tech department
5000~6800cm2/V ·S/2.0~3.4x 1012cm-2
Standard tolerance ±0.01/±3%/none Please contact our tech department
Remark:GaAs pHEMT: Compared with GaAs HEMT, GaAs PHEMT also incorporates InxGa1-xAs,where InxAs  is constrained to x < 0.3 for GaAs-based devices. Structures grown with the same lattice constant as HEMT, but different band gaps are simply referred to as lattice-matched HEMTs.
GaAs mHEMT epiwafer, size:2~6inch
 Item    Specifications   Remark
Parameter In composition/Sheet resistance Please contact our tech department
Hall mobility/2DEG Concentration
Measurement tech X-ray diffraction/Eddy current Please contact our tech department
Un-contact hall
Typical valve Struture dependent Please contact our tech department
8000~10000cm2/V ·S/2.0~3.6x 1012cm-2
Standard tolerance ±3%/none Please contact our tech department
InP HEMT epiwafer, size:2~4inch
 Item    Specifications   Remark
Parameter In composition/Sheet resistance/Hall mobility Please contact our tech department

  

Remark: GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)

Device applications

RF Switch, Power and low-noise amplifiers, Hall sensor, Optical modulator

Wireless: cell phone or base stations

Automotive radar, MMIC, RFIC, Optical Fiber Communications

GaAs Epi Wafer for LED/IR serie:

1.General description:

1.1 Growth Method: MOCVD
1.2 GaAs epi wafer for Wireless Networking

1.3 GaAs epi wafer for LED /IR and LD/PD

2.Epi wafer specs:

2.1 Wafer size: 2”diameter

2.2 GaAs Epi Wafer Structure(from top to bottom):

P + GaAs

p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs / AlAs

Buffer

GaAs substrate

3.Chip sepcification (Base on 9mil*9mil chips)

3.1 Parameter

Chip Size 9mil*9mil

Thickness 190±10um

Electrode diameter 90um±5um

3.2 Optical-elctric characters(Ir=20mA,22℃)

Wavelength 620~625nm

Forward voltage 1.9~2.2v

Reverse voltage ≥10v

Reverse current 0-1uA

3.3 Light intensity characters(Ir=20mA,22℃)

IV (MCD) 80-140

3.4 Epiwafer avelength

Item

Unit

Red

Yellow

Yellow/Green

Description

Wave Length (λD)

nm

585,615,620 ~ 630

587 ~ 592

568 ~ 573

IF =20mA

Growth Methods:MOCVD,MBE

epitaxy = growth of film with a crystallographic relationship between film and substrate homoepitaxy (autoepitaxy, isoepitaxy) = film and substrate are same material  heteroepitaxy = film and substrate are different materials. For more information of growth methods, please click the following: https://www.powerwaywafer.com/technology.html

 

Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

InGaAs Epitaxy Sensor / Detector:

Shortwave Infrared InGaAs Sensor

InGaAs SWIR Detector

InGaAs/InAlAs Epistucture for Single Photon Detector

Epiwafer for Photonic Integrated Chip:

AlGaAs Thin Film Epitaxy for Photonic Integrated Chips

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