GaAs Epiwafer
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.
- Description
Product Description
GaAs Epiwafer
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more product information or discuss a specific epi layer structure
LT-GaAs epi layer on GaAs substrate
GaAs Schottky Diode Epitaxial Wafers
InGaAsP/InGaAs on InP substrates
InGaAsN epitaxially on GaAs or InP wafers
Structure for InGaAs photodetectors
AlGaP/GaAs Epi Wafer for Solar Cell
Layer structure of 703nm Laser
Now we list some specifications:
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GaAs HEMT epi wafer, size:2~6inch |
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Item |
Specifications |
Remark | |
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Parameter |
Al composition/In composition/Sheet resistance |
Please contact our tech department | |
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Hall mobility/2DEG Concentration |
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Measurement tech |
X-ray diffraction/Eddy current |
Please contact our tech department | |
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Un-contact hall |
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Typical valve |
Struture dependent |
Please contact our tech department | |
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5000~6500cm2/V ·S/0.5~1.0x 1012cm-2 |
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Standard tolerance |
±0.01/±3%/none |
Please contact our tech department | |
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Item |
Specifications |
Remark | |
|
Parameter |
Al composition/In composition/Sheet resistance |
Please contact our tech department | |
|
Hall mobility/2DEG Concentration |
|||
|
Measurement tech |
X-ray diffraction/Eddy current |
Please contact our tech department | |
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Un-contact hall |
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Typical valve |
Struture dependent |
Please contact our tech department | |
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5000~6800cm2/V ·S/2.0~3.4x 1012cm-2 |
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Standard tolerance |
±0.01/±3%/none |
Please contact our tech department | |
| Remark:GaAs pHEMT: Compared with GaAs HEMT, GaAs PHEMT also incorporates InxGa1-xAs,where InxAs is constrained to x < 0.3 for GaAs-based devices. Structures grown with the same lattice constant as HEMT, but different band gaps are simply referred to as lattice-matched HEMTs. | |||
| GaAs mHEMT epi wafer, size:2~6inch | |||
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Item |
Specifications |
Remark | |
|
Parameter |
In composition/Sheet resistance |
Please contact our tech department | |
|
Hall mobility/2DEG Concentration |
|||
|
Measurement tech |
X-ray diffraction/Eddy current |
Please contact our tech department | |
|
Un-contact hall |
|||
|
Typical valve |
Struture dependent |
Please contact our tech department | |
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8000~10000cm2/V ·S/2.0~3.6x 1012cm-2 |
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|
Standard tolerance |
±3%/none |
Please contact our tech department | |
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InP HEMT epi wafer,size:2~4inch |
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Item |
Specifications |
Remark | |
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Parameter |
In composition/Sheet resistance/Hall mobility |
Please contact our tech department | |
Remark:GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)
Device applications
RF Switch
Power and low-noise amplifiers
Hall sensor
Optical modulator
Wireless: cell phone or base stations
Automotive radar
MMIC,RFIC
Optical Fiber Communications
GaAs Epi Wafer for LED/IR serie:
1.General description:
1.1 Growth Method: MOCVD
1.2 GaAs epi wafer for Wireless Networking
1.3 GaAs epi wafer for LED /IR and LD/PD
2.Epi wafer specs:
2.1 Wafer size: 2”diameter
2.2Epi Wafer Structure(from top to bottom):
P+GaAs
p-GaP
p-AlGaInP
MQW-AlGaInP
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
3.Chip sepcification (Base on 9mil*9mil chips)
3.1 Parameter
Chip Size 9mil*9mil
Thickness 190±10um
Electrode diameter 90um±5um
3.2 Optical-elctric characters(Ir=20mA,22℃)
Wavelength 620~625nm
Forward voltage 1.9～2.2v
Reverse voltage ≥10v
Reverse current 0-1uA
3.3 Light intensity characters(Ir=20mA,22℃)
IV(MCD) 80-140
3.4 Epi wafer avelength
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Item |
Unit |
Red |
Yellow |
Yellow/Green |
Description |
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Wave Length (λD) |
nm |
585,615,620 ~ 630 |
587 ~ 592 |
568 ~ 573 |
IF =20mA |
Growth Methods:MOCVD,MBE
epitaxy = growth of film with a crystallographic relationship between film and substrate homoepitaxy (autoepitaxy, isoepitaxy) = film and substrate are same material heteroepitaxy = film and substrate are different materialsPlease more information of growth methods, please click the following:https://www.powerwaywafer.com/Wafer-Technology.html
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