GaAs Epiwafer

GaAs Wafer (Gallium Arsenide) GaAs (Gallium Arsenide) Wafers
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GaAs Epiwafer

We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

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Product Description

GaAs Epiwafer 

We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

We have numbers of the United States Veeco’s GEN2000, GEN200 large-scale production of epitaxial equipment production line, full set of XRD; PL-Mapping; Surfacescan, and other world-class analysis and testing equipment. The company has more than 12,000 square meters of supporting plant, including world class super-clean semiconductor and a related research and development of the younger generation of clean laboratory facilities

Specification for all new and featured products of MBE III-V compound semiconductor epi wafer:

Substrate Material Material Capability Application
GaAs low temperature GaAs THz
GaAs GaAs/GaAlAs/GaAs/GaAs Schottky Diode
InP InGaAs PIN detector
InP InP/InP/InGaAsP/InP/InGaAs Laser
GaAs GaAs/AlAs/GaAs
InP InP/InAsP/InGaAs/InAsP
GaAs GaAs/InGaAsN/AlGaAs
/GaAs/AlGaAs
InP InP/InGaAs/InP photodetectors
InP InP/InGaAs/InP
InP InP/InGaAs
GaAs GaAs/InGaP/GaAs/AlInP Solar Cell
/InGaP/AlInP/InGaP/AlInP
GaAs GaAs/GaInP/GaInAs/GaAs/AlGaAs/GalnP/GalnAs Solar Cell
/GalnP/GaAs/AlGaAs/AllnP/GalnP/AllnP/GalnAs
InP InP/GaInP
GaAs GaAs/AlInP
GaAs GaAs/AlGaAs/GalnP/AlGaAs/GaAs 703nm Laser
GaAs GaAs/AlGaAs/GaAs
GaAs GaAs/AlGaAs/GaAs/AlGaAs/GaAs HEMT
GaAs GaAs/AlAs/GaAs/AlAs/GaAs mHEMT
GaAs GaAs/DBR/AlGaInP/MQW/AlGaInP/GaP LED wafer,solid state lighting
GaAs GaAs/GalnP/AlGaInP/GaInP 635nm,660nm,808nm,780nm, 785nm,
/GaAsP/GaAs/GaAs substrate  950nm, 1300nm,1550nm Laser
GaSb AlSb/GaInSb/InAs IR detector,PIN,sensing, IR cemera
silicon InP or GaAs on Silicon High speed IC/microprocessors
InSb Beryllium doped InSb
/ undoped InSb/Te doped InSb/

 

For more detail specification, please review the following:

LT-GaAs epi layer on GaAs substrate

GaAs Schottky Diode Epitaxial Wafers

InGaAs/InP epi wafer for PIN

InGaAsP/InGaAs on InP substrates

 

GaAs/AlAs wafer

InGaAsN epitaxially on GaAs or InP wafers

Structure for InGaAs photodetectors

InP/InGaAs/InP epi wafer

 InGaAs Structure Wafer

AlGaP/GaAs Epi Wafer for Solar Cell

Triple-junction solar cells

GaAs Epitaxy

GaInP/InP epi wafer

AlInP/GaAs epi wafer

 

Layer structure of 703nm Laser

808nm laser wafers

780nm laser wafers

 

GaAs PIN epi wafer

GaAs/AlGaAs/GaAs epi wafer

GaAs Based Epitaxial Wafer for LED and LD, please see below desc.
GaAs pHEMT epi wafer (GaAs, AlGaAs, InGaAs), please see below desc.
GaAs mHEMT epi wafer (mHEMT: metamorphic high electron mobility transistor)
GaAs HBT epi wafer (GaAs HBT is bipolar junction transistors, which are composed of at least two different semiconductors,which is by GaAs based technology.)Metal-semiconductor field effect transistor (MESFET)
Heterojunction field effect transistor (HFET)
High electron mobility transistor (HEMT)
Pseudomorphic high electron mobility transistor (pHEMT)
Resonant tunnel diode （RTD）
PiN diode
hall effect devices
variable capacitance diode （VCD）

 

Now we list some specifications:

GaAs HEMT epi wafer, size:2~6inch

 Item

   Specifications

   Remark

Parameter

Al composition/In composition/Sheet resistance

 Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

 Please contact our tech department

Un-contact hall

Typical valve

Struture dependent

 Please contact our tech department

5000~6500cm2/V ·S/0.5~1.0x 1012cm-2

Standard tolerance

±0.01/±3%/none

 Please contact our tech department

GaAs(gallium arsenide) pHEMT epi wafer, size:2~6inch

 Item

   Specifications

   Remark

Parameter

Al composition/In composition/Sheet resistance

 Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

 Please contact our tech department

Un-contact hall

Typical valve

Struture dependent

 Please contact our tech department

5000~6800cm2/V ·S/2.0~3.4x 1012cm-2

Standard tolerance

±0.01/±3%/none

 Please contact our tech department
Remark:GaAs pHEMT: Compared with GaAs HEMT, GaAs PHEMT also incorporates InxGa1-xAs,where InxAs  is constrained to x < 0.3 for GaAs-based devices. Structures grown with the same lattice constant as HEMT, but different band gaps are simply referred to as lattice-matched HEMTs. 
GaAs mHEMT epi wafer, size:2~6inch

 Item

   Specifications

   Remark

Parameter

In composition/Sheet resistance

 Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

 Please contact our tech department

Un-contact hall

Typical valve

Struture dependent

 Please contact our tech department

8000~10000cm2/V ·S/2.0~3.6x 1012cm-2  

Standard tolerance

±3%/none

 Please contact our tech department

InP HEMT epi wafer,size:2~4inch

  

 Item

   Specifications

   Remark

Parameter

In composition/Sheet resistance/Hall mobility

 Please contact our tech department

  

Remark:GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)

Device applications

RF Switch

Power and low-noise amplifiers

Hall sensor

Optical modulator

Wireless: cell phone or base stations

Automotive radar

MMIC,RFIC

Optical Fiber Communications

GaAs Epi Wafer for LED/IR serie:

1.General description:

1.1 Growth Method: MOCVD
1.2 GaAs epi wafer for Wireless Networking

1.3 GaAs epi wafer for LED /IR and LD/PD

2.Epi wafer specs:

2.1 Wafer size: 2”diameter

2.2Epi Wafer Structure(from top to bottom):

P+GaAs

p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate

3.Chip sepcification (Base on 9mil*9mil chips)

3.1 Parameter

Chip Size 9mil*9mil

Thickness 190±10um

Electrode diameter 90um±5um

3.2 Optical-elctric characters(Ir=20mA,22℃)

Wavelength 620~625nm

Forward voltage 1.9～2.2v

Reverse voltage ≥10v

Reverse current 0-1uA

3.3 Light intensity characters(Ir=20mA,22℃)

IV(MCD) 80-140

3.4 Epi wafer avelength

Item

Unit

Red

Yellow

Yellow/Green

Description

Wave Length (λD)

nm

585,615,620 ~ 630

587 ~ 592

568 ~ 573

IF =20mA

Growth Methods:MOCVD,MBE

epitaxy = growth of film with a crystallographic relationship between film and substrate homoepitaxy (autoepitaxy, isoepitaxy) = film and substrate are same material  heteroepitaxy = film and substrate are different materials. For more information of growth methods, please click the following: https://www.powerwaywafer.com/technology.html

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