GaAs Epiwafer

Product Description

GaAs Epiwafer 

We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

We have numbers of the United States Veeco’s GEN2000, GEN200 large-scale production of epitaxial equipment production line, full set of XRD; PL-Mapping; Surfacescan, and other world-class analysis and testing equipment. The company has more than 12,000 square meters of supporting plant, including world class super-clean semiconductor and a related research and development of the younger generation of clean laboratory facilities

Specification for all new and featured products of MBE III-V compound semiconductor epi wafer:

For more detail specification, please review the following:

LT-GaAs epi layer on GaAs substrate

GaAs Schottky Diode Epitaxial Wafers

InGaAs/InP epi wafer for PIN

InGaAsP/InGaAs on InP substrates

GaAs/AlAs wafer

InGaAsN epitaxially on GaAs or InP wafers

Structure for InGaAs photodetectors

InP/InGaAs/InP epi wafer

 InGaAs Structure Wafer

AlGaP/GaAs Epi Wafer for Solar Cell

Triple-junction solar cells

GaAs Epitaxy

GaInP/InP epi wafer

AlInP/GaAs epi wafer

Layer structure of 703nm Laser

808nm laser wafers

780nm laser wafers

GaAs PIN epi wafer

GaAs/AlGaAs/GaAs epi wafer

Now we list some specifications:

Remark:GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)

Device applications

RF Switch

Power and low-noise amplifiers

Hall sensor

Optical modulator

Wireless: cell phone or base stations

Automotive radar

MMIC,RFIC

Optical Fiber Communications

GaAs Epi Wafer for LED/IR serie:

1.General description:

1.1 Growth Method: MOCVD
1.2 GaAs epi wafer for Wireless Networking

1.3 GaAs epi wafer for LED /IR and LD/PD

2.Epi wafer specs:

2.1 Wafer size: 2”diameter

2.2Epi Wafer Structure(from top to bottom):

P+GaAs

p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate

3.Chip sepcification (Base on 9mil*9mil chips)

3.1 Parameter

Chip Size 9mil*9mil

Thickness 190±10um

Electrode diameter 90um±5um

3.2 Optical-elctric characters(Ir=20mA,22℃)

Wavelength 620~625nm

Forward voltage 1.9～2.2v

Reverse voltage ≥10v

Reverse current 0-1uA

3.3 Light intensity characters(Ir=20mA,22℃)

IV(MCD) 80-140

3.4 Epi wafer avelength

Growth Methods:MOCVD,MBE

epitaxy = growth of film with a crystallographic relationship between film and substrate homoepitaxy (autoepitaxy, isoepitaxy) = film and substrate are same material  heteroepitaxy = film and substrate are different materials. For more information of growth methods, please click the following: https://www.powerwaywafer.com/technology.html