What we provide:
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
yes
***
AlN on sapphire
yes
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on [...]
2019-09-24meta-author
Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]
2019-08-06meta-author
PAM XIAMEN offers Magnesium Fluoride MgF2 Crystal.
Magnesium fluoride, MgF2, crystals have been widely used as windows, lenses, and prisms for wavelength from 110 nm to 7.5 um. It is the most suitable material for ArF excimer lasers used in pulsed laser deposition techniques. For its excellent ulta-violet transmittance [...]
2019-03-14meta-author
Etching is a technique used for micromachining to chemically remove layers from the surface of a wafer during manufacturing. Etching techniques can be divided into wet etching and dry etching. PAM-XIAMEN can provide silicon etching wafer for your applications.
1. Wet Chemical Etching
The mechanism of [...]
2022-05-30meta-author
PAM XIAMEN offers YSZ ( Yittrium stablized ZrO2).
3.5 mol.% YSZ Ceramic Substrate 10x10x0.5 mm , fine ground on both sides
3.5% YSZ Ceramic Substrate 10x10x0.5 mm, two sides polished
3.5mol.% YSZ Ceramic Substrate 10x10x0.5 mm , one side polished
8% YSZ Ceramic Substrate [...]
2019-04-18meta-author
PAM XIAMEN offers Thermal Oxide Wafer in 2” ~ 4″ with research grade. Silicon oxide wafer from PAM-XIAMEN is a silicon dioxide film grown on the surface of the silicon wafer by means of oxygen or water vapor under high temperature (800℃~1150℃) conditions through atmospheric furnace tube equipment through [...]
2019-05-20meta-author