PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
4″ Si wafer, R>20,000Ωcm
Silicon, Si wafers
orientation (100)
dimensions 100 mm x 525µm (+/-25µm) thick.
FZ >20 000 ohm.cm
Ra<0.5 nm
One side polished
Ra<0.5nm (µelectronic grade)
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-05meta-author
PAM XIAMEN offers 6″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
3.2 ±0.2
n- Si:P
0.32-0.46
n+/n++
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-08meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-111
.001-.005
300-350
P/E
PRIME
50.8
P
Boron
CZ
-110
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-110
1-20
250-300
P/E
PRIME
50.8
Any
Any
CZ
Any
Any
200-500
P/E
TEST
50.8
Any
Any
CZ
Any
Any
800-1000
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Intrinsic
Undoped
FZ
-100
5000-10000
275-325
P/E
PRIME
50.8
SI.
Undoped
VGF
-100
>1E7
325-375
P/E
PRIME
50.8
N
Si
VGF
4E+18
250-300
P/E
EPI
50.8
N
Si
VGF
-100
325-375
P/E
PRIME
50.8
P
Zn
VGF
-100
325-375
P/E
PRIME
50.8
Undoped
CZ
-100
>30
300-350
P/P
EPI
50.8
Undoped
CZ
-100
>30
350-400
P/E
EPI
50.8
N
Sb
CZ
(100)off 6-9 tow
.01-.04
150-200
P/E
EPI
50.8
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
50.8
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
50.8
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
50.8
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
50.8
R-Axis
CZ
300-350
P/E
TEST
50.8
N
Si
VGF
-100
275-325
P/E
PRIME
50.8
P
Zn
VGF
-100
275-325
P/E
PRIME
50.8
Si
Fe
VGF
-100
5000000
325-375
P/E
PRIME
50.8
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
50.8
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
2019-03-04meta-author
PAM-XIAMEN can provide a series products of terahertz chip: Power Amplifier (PA) Chip, Low Noise Amplifier (LNA) Chip, PIN/FET Switch, Zero Bias Detector Chip, Amplification Frequency Multiplication Chain (AMC) Chip, MIXER Chip, Schottky Frequency Multiplication MMIC, Schottky Mixing MMIC, and Attenuator Chip. The terahertz chip is a brand-new microchip, a [...]
2021-07-16meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
400
P/P
0.001-0.005
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
0.001-0.005
SEMI Prime, Wafers with striation marks
p-type Si:B
[100]
4″
525
P/P
0.001-0.005
SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.002
SEMI Prime, TTV<4μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.005
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
525
BROKEN
0.001-0.005
Broken wafer (shattered into many pieces)
p-type Si:B
[100]
4″
800
C/C
0.001-0.005
SEMI, With striation marks
p-type Si:B
[100]
4″
?
P/P
SEMI Test
p-type Si:B
[100]
4″
375
P/E
<0.0015 {0.00091-0.00099}
SEMI Prime, TTV<3μm
p-type Si:B
[111]
4″
350
P/E
2-3
Prime, NO Flats
p-type Si:B
[111]
4″
1000
P/P
1-10
SEMI Prime, Cassettes of 10 [...]
2019-03-05meta-author