Deep level defects in p-type GaAs1−x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 [...]
2019-11-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
FZ 4,200-8,000
SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafers
n-type Si:P
[100] ±0.2°
4″
380 ±10
P/E
FZ >3,500
SEMI TEST , 1 Flat
n-type Si:P
[100]
4″
400 ±10
P/P
FZ 3,100-6,800
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
200
P/P
FZ >3,000
SEMI Prime, MCC Lifetime > 1,000μs,
n-type Si:P
[100]
4″
400
P/E
FZ 2,000-6,500
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[100]
4″
915 ±10
E/E
FZ 2,000-3,000
1Flat at [100]
n-type Si:P
[100]
4″
300
L/L
FZ 1,100-1,600
SEMI
n-type Si:P
[100] ±1°
4″
200 [...]
2019-03-05meta-author
The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power [...]
2024-03-27meta-author
PAM XIAMEN offers 1654nm laser diode wafers.
Available Center Wavelengths: 1640nm – 1670nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 8mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 10 pm/mA
Slope Efficiency (typical): 0.10 mW/mA
For more [...]
2019-03-13meta-author
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Highlights
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]
For non-cubic crystals, they are inherently anisotropic, that is, different directions have different properties. Take the silicon carbide crystal faces for example as below:
The space groups of 4H-SiC and 6H-SiC are P63mc, and the point group is 6mm. Both belong to the hexagonal system [...]
2021-04-07meta-author