Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures

Deep level defects in p-type GaAs1−x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 °C does not affect the total concentration of hole traps, which is ~4 × 1016 cm−3, comparable to the concentration of electron traps observed in Si-doped GaAsBi having a similar alloy composition. Increasing the growth temperature of the p-type GaAsBi (x = 0.8%) layer from 330 °C to 370 °C reduces the hole trap concentration by an order of magnitude. Moreover, the defects having near mid-gap energy levels that are the most efficient non-radiative recombination centers are present only in GaAsBi layers grown at the lower temperature. These new results are discussed in the context of previous measurements of n-type GaAs and GaAsBi layers grown under similar conditions.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2019-11-25

Related Posts

Fe – Stainless Steel Substrate ( Polycrystaline)

PAM XIAMEN offers Fe – Stainless Steel Substrate ( Polycrystaline). Stainless Steel Substrate (SUS301 HV200-HV600 ): 1″ Dia x 0.3 mm, as cold rolling Stainless Steel Foil: SS316 0.1mm Thick x 300mm W x 4000 mm L Stainless Steel Foam: SS316 1mm Thick x [...]

2019-05-08meta-author

InGaAs APD Wafers

PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging [...]

2021-04-15meta-author

Silver Conductive Film

PAM XIAMEN offers Silver Conductive Film. Planarized Silver Nanowire Film（230mm W x 1 M L x 125 microns, 12 ohm/sq ）on Heat Stabilized PET for thin film applications – Ag-PET-12K-1 Planarized silver nanowire film on heat stabilized PET for thin film applications Width 9in./230mm [...]

2019-04-26meta-author

Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique

Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection techniqueThere is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether [...]

2013-10-17meta-author Characterization, Defects, Optical microscopy, Substrates

4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]

2020-05-27meta-author

4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm

PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 100 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , resistivity ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with the thickness 10nm/50nm For more information, send us email at [email protected] and [email protected]

2021-03-16meta-author

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.