PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:
No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
Diameter: Production-100,0 mm+/-0,2 mm
Carrier type: [...]
2020-05-19meta-author
PAM XIAMEN offers Photographic Plate.
Accuracy Index (Standard Size:430mmx430mm)
Min.Line/Space Width
20μm/20μm
CD Control
±2.0μm
Total Pitch Accuracy
±5.0μm
Registration Accuracy
±4.0μm
Overlay Accuracy
4.0μm
Orthogonality
4.0μrad
Chrome Plate Material Substrate
Material
Soda Lime Glass
Max. Size
24″×32″
Normal Size
5″x5″,20″x24″,22″x26″,24″x28″
Thickness
5.0mm±0.2mm
Film Type
Emulsion
Optical Density(λ=450nm)
≥3.6
Main application areas:
Mainly used in PCB, IC load board and IC Lead Frame and other industries
For more information, please visit our website: https://www.powerwaywafer.com,send us email [...]
2019-07-04meta-author
The photoluminescent germanium nanocrystals (Ge-NCs) were successfully incorporated into electrospun polymeric nanofiber matrix in order to develop photoluminescent nanofibrous composite web. In the first step, the synthesis of Ge-NCs was achieved by nanosecond pulsed laser ablation of bulk germanium wafer immersed in organic liquid. The size, [...]
Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat.
Parameter
Unit
PAM210305-SI
Grade
—
Polycrystalline back sealed polished wafer
General Characteristics
—
—
Growth Method
—
CZ
Diameter
mm
200±0.2
Type
—
N
Crystal Orientation
—
<100>±0.5
Dopant
—
AS
Electrical Characteristics
—
—
Resistivity
Ω•cm
0.002-0.004
RRG 1 C-1/2R MAX
%
/
RRG 2 C-6mm MAX
%
≤8
Life time
msec
/
Chemical Characteristics
—
—
Oxygen
PPMA
/
ORG
%
/
Carbon
PPMA
/
Bulk metal
#/cm3
/
Surface metal
#/cm2
≤5E10(Na,K,Al,Ni,Ca;Cu,Zn,Cr,Fe)
Structural Characteristics
—
—
Dislocation
#/cm2
None
OISF
#/cm2
/
Mechanical [...]
2021-03-25meta-author
Bulk GaN Crystal Grown by HVPE
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
2012-10-16meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime,
n-type Si:P
[111]
2″
500
P/E
2.2-3.8
SEMI Prime,
n-type Si:P
[111]
2″
300
P/E
1-10
SEMI Prime, , TTV<5μm
n-type Si:P
[111]
2″
500
P/E
1-10
SEMI Prime,
n-type Si:P
[111] ±0.5°
2″
6000
P/E
1-10
SEMI Prime, Individual cst
n-type Si:Sb
[111] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime,
n-type Si:Sb
[111-3.5°] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime, , in hard cassettes of 5 & 8 wafers
n-type Si:Sb
[111]
2″
2900
P/P
0.013-0.015
Prime, NO Flats, Individual cst
n-type Si:Sb
[111-2.5°] ±0.5°
2″
280
P/E
0.012-0.017
SEMI,
n-type Si:As
[111] ±0.5°
2″
279
P/E
0.001-0.005
SEMI Prime
p-type [...]
2019-03-07meta-author