PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ [...]
2019-06-24meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,000
SEMI, , in hard ccassettes of 4, 5 & 5 wafers
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
225
P/P
FZ >100
SEMI, , Individual cst, 1 very deep scratch
n-type Si:P
[100]
2″
280
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[100]
2″
150
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 2-5
SEMI Prime
n-type Si:P
[111-3.5° towards[110]] ±0.5°
2″
279 ±15
P/E
FZ >2,000
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm, Both-sides Epi-Ready
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm
n-type [...]
2019-03-07meta-author
When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there [...]
2021-04-12meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1mm.
6” Silicon wafer
Wafer Size : 6 inch Silicon
Thickness : 1mm
One side polishing
Axial direction : <100>
Type : P
resistivity:1-100Ωcm
no requirement for Particle
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-01meta-author
The Japanese component manufacturing company Namiki recently announced several technological advancements and equipment upgrade for advanced industrial component production. Namiki successfully produced unprecedented large sized diamond substrates and realized the bonding of two different materials under room temperatures; moreover, the corporation reinvented its cleaning [...]
2017-08-01meta-author