Silicon wafers can be supplied with specifications as found in: https://www.powerwaywafer.com/silicon-wafer
Silicon is a semiconductor material, and its resistivity is closely related to the doping concentration. Doping is that introducing a small amount of impurities into silicon crystals to alter their electrical properties. According to the [...]
2024-03-29meta-author
Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author
PAM XIAMEN offers NaCl Sodium Chloride Crystal Substrates.
Sodium Chloride (NaCl) Crystal Substrates
Main Parameters
Crystal structure
Face-centered cubic Fm3m, No. 225, a=5.64Å
Growth method
crystallization process
Density
2.165 g/cm3
Melting Point
801 [...]
2019-03-14meta-author
PAM XIAMEN offers GaN Template on Sapphire& Silicon.
No.1: Doped GaN Template on Sapphire
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN [...]
2019-04-28meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]