PAM XIAMEN offers single crystal LiTaO3.
LiTaO3 X-cut
LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP
LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp
LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp
LiTaO3, 4″ wafer, specific parameters as follows:
4″ LT Wafer Specification
Diameter
100.0±0.5mm
Orientation Flat (OF)
30±2mm
Second Refer. Flat [...]
2019-05-08meta-author
Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]
2023-12-08meta-author
PAM XIAMEN offers LaAlO3 Single Crystal Substrat
Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
2019-05-07meta-author
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES.
Nd:GGG (neodymium doped gadolinium gallium garnet)
Chemical formula: Nd:Gd3Ga5O12
Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
2019-03-12meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
M-Plane (1-100)
Al2O3 – Sapphire Wafer, M plane, 5x5x0.5mm, 2 SP – ALM050505S2
Al2O3 – Sapphire Wafer, M plane, 5x5x0.5mm,1 SP – ALM050505S1
Al2O3 – Sapphire Wafer, M plane, <10-10> 10x10x0.5mm, 2SP – ALM101005S2″
Al2O3 – Sapphire Wafer, [...]
2019-04-16meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:
Description
Growth Method
—
MCZ
Single crystal size
inch
2 – 8
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks:The above parameters can be customized.
FAQ about MCZ Silicon Wafers
Q:This is just a curiosity, but let me ask about the production method of [...]
2019-02-27meta-author