PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES.
Nd:GGG (neodymium doped gadolinium gallium garnet)
Chemical formula: Nd:Gd3Ga5O12
Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long fluorescence lifetime. Because of these unique properties, Nd:GGG crystal has been considered as one of the best materials for the high average power solid-state laser. The applications include semiconductor laser pump and can be operated with CW-laser and pulse laser.
|Crystal structure||Cubic Garnet|
|Growth method||Czochralski method|
|Unit cell constant||a=12.376Å, (Z=8)|
|Melt point (℃)||1800|
|Index of refraction||1.95|
|Sizes||10×3, 10×5, 10×10, 15×1, 20×15, 20×20|
|dia2″, 15 x 15 mm, other sizes are available upon request|
|Polishing||Single or double side polished|
|Redirection the edge:||2° (special in 1°)|
|Surface Roughness Ra:||≤5Å（5µm×5µm）|
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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