PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
280
P/E/P
1-20
SEMI Prime
p-type Si:B
[111-1.5°]
2″
400
P/E
1-10
SEMI Prime
p-type Si:B
[111]
2″
500
P/E
1-10
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
280
P/E
0.5-0.6
SEMI Prime
p-type Si:B
[111-3°]
2″
300
P/P
0.016-0.018
SEMI Prime
p-type Si:B
[111-3.5°]
2″
280
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[111]
2″
600
P/E
0.01-0.05
SEMI Prime
p-type Si:B
[111-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110]
2″
1000
P/P
~4
NO Flats
n-type Si:P
[110]
2″
950
P/P
2.5-3.5
1 F @ <1,-1,0>
n-type Si:P
[110]
2″
450
P/P
~0.6
1 F @ <001>
n-type Si:P
[110]
2″
1000
P/P
0.5-1.0
PF<111> SF 109.5°
n-type Si:P
[100]
2″
500
P/P
800-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
>50
SEMI Prime,
n-type Si:P
[100]
2″
5000
P/E
42-53
SEMI Prime, , Individual cst
n-type [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[111-2.5°]
3″
300
P/E
0.014-0.018
SEMI Prime
n-type Si:Sb
[111-3.5°]
3″
380
P/E
0.014-0.016
SEMI Prime
n-type Si:Sb
[111-3°]
3″
300
P/E
0.011-0.016
SEMI Prime
n-type Si:Sb
[111] ±0.5°
3″
300
P/P
0.01-0.20
SEMI Prime
n-type Si:Sb
[111]
3″
380
P/E
0.008-0.025
SEMI Prime
n-type Si:As
[111-0.5°]
3″
380
P/P
0.003-0.005
SEMI Prime
n-type Si:As
[111]
3″
380
P/E/P
0.002-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
3″
380
P/E
0.002-0.005
SEMI Prime
n-type Si:As
[111-4°]
3″
380
P/E
0.002-0.005
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-03-06meta-author
GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]
2022-09-27meta-author
Colleges and universities are not only the gathering place of innovative talents, but also the source of innovation achievements. PAM-XIAMEN has collected the research and development (R&D) expenditure rankings of U.S. higher education institutions in 2019~2020.
As a leading manufacturer of semiconductor materials, PAM-XIAMEN is [...]
2022-08-31meta-author