PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging [...]
2021-04-15meta-author
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]
2018-08-14meta-author
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
2015-08-19meta-author
PAM XIAMEN offers Lithium Metal Foil.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Purity 99.9% Lithium
Melting Point 180.5 °C
Density 0.534 g/cm3
Color Silver
Dimension “16 mm x 0.6 mm
(diameter x thickness)”
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]