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THz Generation Process in LT-GaAs
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
Flipping 60 GHz transistors
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PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Main parameters Crystal structure M3 Growth method crystallization process Crystal lattice parameters a=5.596Å Density 2.75(g/cm3) Index of refraction 1.49025 Surface roughness < 5 [...]
80+1mm FZ Si Ingot
PAM XIAMEN offers 80+1mm FZ Si Ingot FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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