PAM XIAMEN offers 80+1mm FZ Si Ingot
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
We offer LT-GaAs wafer for THz or detector and other application. 1. 2″ LT-GaAs Wafer Specification:Item SpecificationsDiamater(mm) Ф 50.8mm ± 1mmThickness 1-2um or 2-3umMarco Defect Density ≤ 5 cm-2Resistivity(300K) >108 Ohm-cmCarrier ＜0.5psDislocation Density <1×106cm-2Useable Surface Area ≥80%Polishing Single side polishedSubstrate GaAs substrate Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. LT-GaAs [...]
New graphene fabrication method uses silicon carbide templateGraphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
PAM XIAMEN offers MoS2 crystal. As a transition metal dichalcogenide, MoS2 is composed of two-dimensional layers stacked in the vertical direction. It possesses some of graphene’s desirable qualities (such as mechanical strength and electrical conductivity), and can emit light, opening possible applications such as [...]
PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at [email protected] if you need other specs and quantity. Physical ConstantsConstant Name ValueDensity (g/cm3) 2.27Dielectric Constant 3.9DC Resistivity @25°C (Ω-cm) 1016Energy gap (eV) ~9Thermal conductivity (W/cm2°C) 0.014Linear expansion coefficient (ppm/°C) 0.05Refractive index 1.46Melting Point (°C) ~1700Molecular weight 60.08Molecules/cm3 2.3*1022Specific [...]
Charge Sensitive Pre-amplifier PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas. SpecificationPower Consumption <0.43WPower ±12VOutput Resistance 50 ΩEquivalent Noise ENC: 130e–Working temperature -20℃-+40℃Falling edge time 250 ~ 400usInput charge range <1000fcGain G=10mv/fcDimension 100×76×44mm3Weight 265gSpectrum Features Portable, user [...]
808nm laser wafers Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 808nm AlGaInP/GaAs laser structure wafers.Layer Material X Y Strain tolerance PL Thickness Type Level (ppm) (nm) (um) (cm-3)8 GaAs 0.1 P >2.00E197 GaIn(x)P 0.49 +/-500 0.05 P 6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500r 1 P 5 GaIn(x)P 0.49 +/-500 0.5 U/D 4 GaAs(x)P 0.86 +/-500 798 0.013 U/D 3 GaIn(x)P 0.49 +/-500 0.5 U/D 2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 N 1 GaAs 0.5 N 0 GaAs substrate N Source:PAM-XIAMEN FAQ: Q1：I plan to fabricate more than 10W LD , so can you advise a laser wafer that can we have 4mm cavity [...]
