PAM XIAMEN offers 80+1mm FZ Si Ingot
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal. Main Specifications dimensional tolerance： Dia：< +/-0.025 mm ,length: < +/-0.5 mm flatness： λ/8 @633nm Surface fineness： 10/5 flatness： 20 arc sec. verticality： 5 arc min orientation： <111> crystalline direction,< +/-0.5° coating film： AR coating, HR Coating reflect： R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm, clear aperture： >95% central area wavefront distortion： <7mm diameter : <λ/8 per inch @ 633nm, 7mm diameter : <λ/10per inch @ 633nm Publications related to YAG laser crystals: [1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964) [2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
Polarization degree and vector angle effects on a CdZnTe focal plane performance To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates that we have in stock! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 300 ± 10 µm 30 10 30 6 DSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 [...]
LaAlO3 (Lanthanum Aluminate) substrate is available for. LaAlO3 substrate is commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics [...]
PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]
PAM XIAMEN offers NdCaAlO4 crystal. Crystal Structure /lattice constant M.P. oC Density g/cm3 Thermo-Expans x10-6/K Dielectric constant Lattice Mismatch to YBCO Max. Dia NdCaAlO4 Tetrag.a=3.685 c=12.12 1850 5.56 12 19.5 0.055 CZ 35mm NdCaAlO4 (001) 10x10x0.5 mm, 1 side polished NdCaAlO4 (001) 10x10x0.5 mm, 2 sides polished NdCaAlO4 (100) 10x10x0.5 mm, 1 side polished For more information, please visit our [...]
