3-6. Edge Chips
Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
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5-6-4-1 SiC High-Power Rectifiers
The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
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5-5-1 Choice of Polytype for Devices
As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
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5-2-2-1 SiC Crystallography: Important Polytypes and Definitions
Silicon carbide occurs in many different crystal structures, called polytypes. A more comprehensive
introduction to SiC crystallography and polytypism can be found in Reference 9. Despite the fact that
all SiC polytypes chemically consist of 50% carbon atoms covalently bonded [...]
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3-7. ID Correct and Major Wafer Flat
Both should be readily discernible.
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2-35.Prime Grade
Prime Grade:The highest grade of a silicon carbide wafer. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Prime Wafers”.
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