PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375±25μm.
3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-07-05meta-author
PAM XIAMEN offers MgAl2O4 Magnesium Aluminate Crystal substrate.
Magnesium aluminate (spinel) single crystals are widely used in ultrasonic and microwave material and device related epitaxial growth. We also offer polycrystalline spinel optical windows.
Crystal Structure: Cubic
Lattice parameter: a = 8.085 A
Melting point (℃): 2130℃
Density: 3.64 g/cm3
Hardness: 8 Mohs
Available orientations: <100>, <111>, <110> [...]
2019-03-14meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
1″
50 ±10
P/P
1-100
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers
n-type Si:P
[100]
1″
280
P/P
1-20
SEMI Prime
n-type Si:P
[100]
1″
280
P/E
1-5
SEMI
n-type Si:P
[100]
1″
1500
P/E
1-20
Prime,
n-type Si:P
[100]
1″
525
P/E
0.05-0.15
SEMI
n-type Si:P
[111]
1″
330
P/E
FZ >90
Prime
p-type Si:B
[100]
1″
775
P/E
8-12
SEMI Prime
p-type Si:B
[100]
24mm
300
P/E
1-100
Prime,
p-type Si:B
[100]
1″
300
P/E
1-10
Prime,
p-type Si:B
[100]
1″
500
P/E
1-10
p-type Si:B
[100]
1″
380
P/E
0.003-0.005
SEMI Prime
p-type Si:B
[100]
1″
275
P/E
0.002-0.005
Prime
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author
This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of [...]
2019-01-09meta-author