InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW
A TEAM of Taiwanese engineers has used flip-chip packaging to build anInGaAs HEMT delivering up to 6.5 dB of gain at 60 GHz.
The researchers argue that one of the [...]
2012-09-10meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16
4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06meta-author
PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html.
The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap [...]
2024-03-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
381
P/E
0.085-0.115
SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
p-type Si:B
[110] ±0.3°
3″
381
P/E
0.0448-0.0672
SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
p-type Si:B
[110] [...]
2019-03-06meta-author
Highlights
•The barrier controlled trapping model was developed around extended defects.
•Electron mobility and E-field distribution were distorted by space charge depletion region.
•Extended defects act as a recombination-activated region.
•The relationships between extended defects and detector performance were established.
Transient current techniques using alpha particle source were utilized [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
4”FZ P-type
orientation 111
thickness 400±15
Resistivity 15000Ωcm
polished side 1
Acid etched side 2
life time 1000
SEMI STD
DISLOCATION DENSITY 500 max/ cm2
TTV/TAPER 12μm max
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-06-24meta-author