Effects of mosaic structure on the physical properties of CdZnTe crystals
Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
2013-09-23meta-author
PAM XIAMEN offers Cu Coated Silicon.
Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm
Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm
Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]
2019-04-26meta-author
PAM XIAMEN offers TGG (Terbium Gallium Garnet).
TGG singlecrystal( Terbium Gallium Garne ) is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm.
TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
2019-05-20meta-author
PAM XIAMEN offers Quartz Frit.
1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc
Specifications
Diameter – mm
25
Thickness – mm
4
Porosity
15~40um or 4~15um (Please select the pore size in the optional bar)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-04-18meta-author
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]
GaAs based AlGaInP laser diode wafer can be supplied by PAM-XIAMEN with a band of 635nm. The III-V AlGaInP semiconductor material that can be lattice matched with the GaAs substrate has a wide direct band gap (1.9~2.3eV), a wide range of luminous wavelengths and [...]
2022-06-07meta-author