PAM XIAMEN offers Single-emitter LD Chip 9xxnm @10W.
Brand: PAM-XIAMEN
Wavelength: 9xxnm
Stripe width: 96um
Output Power: 10W
Cavity Length:4.8mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
CONGRESSIONAL RESEARCH ARM PRODUCES REPORT ON THE U.S. CHIP INDUSTRY
A newly released report by a non-partisan research arm of Congress underscores how semiconductors’ economic and military importance has made the industry’s health a focus of congressional interest for nearly 70 years. The report, produced by the [...]
2016-07-20meta-author
PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html.
SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal [...]
2024-04-19meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,000
SEMI, , in hard ccassettes of 4, 5 & 5 wafers
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
225
P/P
FZ >100
SEMI, , Individual cst, 1 very deep scratch
n-type Si:P
[100]
2″
280
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[100]
2″
150
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 2-5
SEMI Prime
n-type Si:P
[111-3.5° towards[110]] ±0.5°
2″
279 ±15
P/E
FZ >2,000
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm, Both-sides Epi-Ready
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm
n-type [...]
2019-03-07meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production [...]
Freestanding GaN , Wafer Specification
https://www.powerwaywafer.com/freestadning-gan-substrate.html
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
2019-03-20meta-author