Tag - GaN HEMT on sapphire

GaN-based Nanocolumn Emitters and related Technologies

GaN-based Nanocolumn Emitters and related Technologies       Abstract:  GaN nanocolumns, one-dimensional columnar nanocrystals, possess low dislocation and high light extraction efficiency properties; thus, the nanocolumns have a great potentiality to improve substantially the luminous efficiency in the green-to-red emission region. Periodically arranged GaN nanocolumns, in each of which an InGaN/GaN multiple [...]

PAM-XIAMEN Offers AlGaN–GaN HEMTs Grown on Sapphire Substrates

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production in 2012.  And now PAM-XIAMEN [...]