Multi-pixel Spectral Imaging Module

  • Home
  • News
  • Multi-pixel Spectral Imaging Module

Multi-pixel Spectral Imaging Module

PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γcamera and SPECT.

Direct splice: The module has a time sequence interface and a bias circuit. Added with FPGA, ADC and layout circuit, it will readout.
Indirect using: Systemize the module and design for special environment.
Splicing methods: USE TCP/IP or USB interface.

Specification

CZT dimension 25.4×25.4×5mm3
Pixel size 1.5×1.5mm2
Pixel array 16×16
Energy resolution 90%pixels<6.5%@122KeV 25℃
Parameter configuration SPI interface parameter configuration
Signal readout All pixels can be read out at the same time
Interface Dasisy-chained
Detection range 20KeV~700MeV
Power 240mW/module
Module dimension 25.5×25.5×30mm3
Defective pixel <6 pixels/module
Splicing 360° splicing with none-blind area

 

Spectrum & Structure

 

 

 

 

 

 

 

 

For more information, please send us email at victorchan@powerwaywafer.com

2019-04-24

Share this post

Related Posts

DyScO3/GdScO3//TbScO3

PAM XIAMEN offers DyScO3/GdScO3//TbScO3. Crystal  Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech  DyScO3  Orthorombic   a=5.44  b=5.71  c=7.89  2127  6.9  CZ  GdScO3  Orthorombic  a=5.45  b=5.75  c=7.93  2127  6.6  CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233  c = 7.9147 2127  6.6 CZ DyScO3 DyScO3 (110) 5x5x0.5mm 1sp DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp DyScO3 (001) 10x10x0.5mm 2sp [...]

2019-04-30meta-author
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]

2019-07-04meta-author
LEDinside: Top Six LED Supply and Demand Market Trend in 2017

According to the latest report from LEDinside, a division of the market research firm TrendForce, 2017-2021 LED Industry Demand and Supply Data Base- 2Q17, mainly analyzes top six LED demand and supply market trend in 2017, including IT display market, lighting market trend, automotive LED market [...]

2017-06-05meta-author
LaAlO3 single crystal-2

PAM XIAMEN offers LaAlO3 single crystal. LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]

2019-05-07meta-author
4″ Silicon Wafer-1

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 100 N Phos CZ -100 1-20 43768 P/P PRIME 100 N Phos CZ -100 1-20 40-60 P/P PRIME 100 N Phos CZ -100 1-20 80-100 P/P PRIME 100 N Phos CZ -100 1-20 180-200 P/P PRIME 100 N Phos CZ -100 300-350 P/P PRIME 100 N Phos CZ -100 1-20 300-350 P/E PRIME 100 N Phos CZ -100 350-400 P/P PRIME 100 N Phos CZ -100 1-3 350-400 P/P PRIME 100 N As CZ -100 .001-.005 375-425 P/P PRIME 100 N Phos CZ -100 1-20 375-425 P/E PRIME 100 N Phos CZ -100 450-500 P/P PRIME 100 N As CZ -100 .001-.005 450-500 P/P PRIME 100 N Sb CZ -100 .005-.02 450-500 P/P PRIME 100 N Phos FZ -100 >3000 450-500 P/P PRIME 100 N As CZ -100 .001-.005 500-550 P/E PRIME 100 N Sb CZ -100 .005-.02 500-550 P/E PRIME 100 N Phos FZ -100 >3000 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E/DTOx PRIME 100 N Phos CZ -100 1-20 500-550 P/E/Ni PRIME 100 N Phos CZ -100 1-20 500-550 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author
Zn – Polycrystalline Substrate

PAM XIAMEN offers Zn – Polycrystalline Substrate. Polycrystallline            Zn substrate Purity:                          99.5% Average Grain Size:       Microns  ( No annealling ) Substrate dimension:     10 x 10 x0.5 mm Polishing:                     One side polished and One  sides as cool rolling  For more information, please visit [...]

2019-05-10meta-author