Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
100
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
100
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
100
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/E
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/P
PRIME
100
P
Boron
CZ
-100
1-20
350-400
P/P
PRIME
100
P
Boron
CZ
-100
1-20
375-425
P/E
PRIME
100
P
Boron
CZ
-100
.001-.005
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.005-.02
450-500
P/P
PRIME
100
P
Boron
FZ
-100
>3000
450-500
P/P
PRIME
100
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.001-.005
500-550
P/E
PRIME
100
P
Boron
CZ
-100
.005-.02
500-550
P/E
PRIME
100
P
Boron
FZ
-100
>3000
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/WTOx
100
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
100
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM XIAMEN offers P-type Silicon. Please send us emails if you need other specs and quantity.
See below for a short list of our p-type silicon substrates.
P-type Silicon
Si 50.8mm P-type Boron Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
Si 76.2mm P-type Boron Doped (100) 1-10 [...]
2019-02-13meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author