We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an [...]
2019-07-08meta-author
Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]
2023-12-08meta-author
Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]
2019-08-06meta-author
PAM-XIAMEN is able to supply epitaxial growth service for photonic crystal surface emitting laser (PCSEL), take the following epi structure for example. Also, we can do customized structure growth of PCSEL laser at any wavelength to meet your application needs. Photonic crystal surface-emitting lasers are an [...]
2023-07-20meta-author
Yellow and Green Luminescence in a Freestanding GaN Template
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV [...]
2012-09-04meta-author
PAM XIAMEN offers InP Indium Phosphide Crystal Substrates.
Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types.
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2019-03-12meta-author