PAM XIAMEN offers BK7 Glass for Precision Lenses.
Below are just some of the BK7 Glass Windows.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia (mm)
Thick (μm)
Pol
Qty in Stock
PAM3334
76.2
500
DSP
100
PAM3335
100
500
DSP
100
PAM3336
150
500
DSP
100
Following image shows the transmission spectrum of BK7 glass substrate:
For more information, please [...]
2019-02-27meta-author
PAM XIAMEN offers TeO2 Tellurium Dioxide Crystals.
Tellurium Dioxide, TeO2 is an excellent ascousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation and slow propagation velocity along [110] direction. The resolution of AO devices made of TeO2 crystals will increase several [...]
2019-03-15meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 4″{100.0±0.2}Ø×500±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
Solar Silicon Wafers
PAM XIAMEN offers Solar Silicon Wafers.
Limiting Efficiency
It has been well established that the limiting efficiency of single crystals falls at about 29% [Swanson] this limit was established in the seminal work by Tiedje. In figure 1 we can see this limiting efficiency [...]
2019-02-14meta-author
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]