Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading

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Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading

Published by:

Quanli Zhang ; Zhen Zhang ; Honghua Su ; Qingliang Zhao ; Suet To.

1.College of Mechanical and Electrical EngineeringNanjing University of Aeronautics and AstronauticsNanjingChina
2.Centre for Precision Engineering, School of Mechatronics EngineeringHarbin Institute of TechnologyHarbinChina
3.State Key Laboratory of Ultra-precision Machining TechnologyThe Hong Kong Polytechnic UniversityHung HomChina

Abstract

Indentation test (Nanoindentation and Vickers indentation), diamond scratching and high spindle speed grinding are conducted to investigate the role of silicon (Si) in the surface damage behavior of reaction-bonded SiC/Si composites (RB-SiC/Si). Even though the addition of Si contributes to densifying the bulk materials and improving the toughness, the indentation and diamond scratching results firstly indicate that the cracks initiate at the SiC/Si interfaces due to the non-uniform deformation caused by the existence of Si, and the phase transformation of Si also leads to the pop-out effect during the nanoindentation and the diamond scratching test. The ground surface of RB-SiC/Si is characterized by scratching grooves and brittle fracture, indicating the ductile material removal mode and brittle material removal mode for RB-SiC/Si, respectively, and the surface reliefs form on the ground surface due to the different hardness between Si and SiC phases. Moreover, the phase transformation of Si contributes to the easy fracture of phase boundaries under the mechanical loading, and the accompanied volume change also results in the dislodgement of hard particles and the generation of surface burs on the ground surface.

Subject(s): fracture ; grain boundaries ; grinding ; phase transformation ; RB-SiC/Si .

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… workpiece material is commercially available RB-SiC/Si composite (Goodfellow Cambridge Ltd.,UK), in which about 10 wt.% free silicon remains and the diameter of the SiC particles is about 10 μm, and single crystalline Si and 6H-SiC (Xiamen Powerway Advanced Material …”

Source:https://link.springer.com/article/10.1007/s11665-018-3805-9

About Xiamen Powerway Advanced Material Co., Ltd

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application. PAM-XIAMEN offers SiC, GaN,GaAs Wafer and Epitaxial growth from N type,P type or semi-insulating with size from 2″ to 6″.

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