2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author
2-24.Wafer Orientation
Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure with a lattice spacing of 5.430710 Å (0.5430710 nm).When cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. [...]
2018-06-28meta-author
5-4-1 Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for
commercial mass production of semiconductor electronics. Many semiconductor materials can be melted
and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
2018-06-28meta-author
2-23.Micropipe density
A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
2018-06-28meta-author
5-4-5 SiC Crystal Dislocation Defects
Table 5.2 summarizes the major known dislocation defects found in present-day commercial 4H- and 6H-SiC wafers and epilayers . Since the active regions of devices reside in epilayers, the epilayer defect content is clearly of primary importance to SiC device [...]
2018-06-28meta-author