PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
GaAs epi wafer for microelectronic and optoelectronic devices
PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell.
Electronic devices
Material(layer/substrate)
Application
Technology Tends
Material Required
Digital IC
(MESFETHEMT)
GaAs/GaAs
GaAlAs/GaAs
Ultra-high-speed computers
PC,ATM,Image Processing
High level [...]
2019-03-15meta-author
The process of silicon carbide oxidation is simple. The silicon carbide substrate can be directly thermally oxidized to obtain SiO2 on the substrate. Silicon carbide is the only compound semiconductor that can obtain high-quality SiO2 through silicon carbide thermal oxidation. The theoretical formula is as follows:
SiC+1.5O2→SiO2+CO
That is, to grow 100nm [...]
2021-04-26meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Boron
P
100
0,0 ± 0,0
110 ± 0,20
0.0 ± 0.1 °
1 – 20 Ohmcm
150.0 ± 0.2 mm
675 ± 5 µm
60
3
6
DSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
30 – [...]
2019-02-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
300
P/P
5-10
SEMI Test, Scratched and unsealed. Can be re-polished for extra fee
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (in Opened cassette), 2Flats
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (with bad surface)
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime, hard cst, Back-side slightly darker than normal
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Test, Dirty wafers, can be cleaned for extra fee
p-type Si:B
[100]
4″
380
BROKEN
5-10
Broken P/E Wafers, [...]
2019-03-05meta-author