The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
FZ 4,200-8,000
SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafers
n-type Si:P
[100] ±0.2°
4″
380 ±10
P/E
FZ >3,500
SEMI TEST , 1 Flat
n-type Si:P
[100]
4″
400 ±10
P/P
FZ 3,100-6,800
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
200
P/P
FZ >3,000
SEMI Prime, MCC Lifetime > 1,000μs,
n-type Si:P
[100]
4″
400
P/E
FZ 2,000-6,500
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[100]
4″
915 ±10
E/E
FZ 2,000-3,000
1Flat at [100]
n-type Si:P
[100]
4″
300
L/L
FZ 1,100-1,600
SEMI
n-type Si:P
[100] ±1°
4″
200 [...]
2019-03-05meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm
5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm
5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm
5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm
5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm
5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm
5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm
5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm
5″Ø×290mm ingot [...]
2019-03-08meta-author
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Highlights
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]
PAM-01C1 integrated customized hemispherial electrode CZT detector and low noise charge sensitive preamplifier. It can convert X/γ-ray into exponential decay signal. Working with five-pin cable, high and low power supply, main amplifier,those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be [...]
2019-04-23meta-author
The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an [...]
2019-06-17meta-author