PAM XIAMEN offers ITO/ZnO coated Sodalime Glass.
ITO/ZnO Coated Glass Substrate 1″ x 1″ x 0.7 mm, ITO Film=100nm, ZnO film=50nm
ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm
Dimension: 1″ x 1″ x 0.7 mm
Resistivity: N/A
ITO film=100nm,ZnO film=50nm
For more information, please visit our website: [...]
2019-04-28meta-author
GaN/SiC HEMT epi-wafers
PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected [...]
2020-03-18meta-author
Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward [...]
2019-10-30meta-author
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
Thermodynamic analysis was conducted to determine the conditions necessary for the selective epitaxial growth (SEG) of SiC on masked Si substrates, and these results were compared to blanket SiC epitaxy on plain Si. For blanket SiC epitaxy, the proper deposition conditions leading to single‐phase SiC [...]
2020-01-07meta-author
Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]
