PAM XIAMEN offers BN (h) – 2D crystal.
Natural Boron Nitride Single Crystal, 0.6-1.0 mm
Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than [...]
2019-04-17meta-author
Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds
Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and [...]
2012-06-20meta-author
PAM XIAMEN offers MCZ silicon ingot and silicon wafer.
Description
Growth Method
—
MCZ
Single crystal size
inch
2-6
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks：The above parameters can be customized.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-02-27meta-author
PAM XIAMEN offers Carbon Substrate & Foam.
Graphene film on Ni/SiO2/Si
Applications:
Graphene electronics
Conductive coatings
Aerospace industry
Support for metalic catalysts
Microactuators
MEMS and NEMS
Chemical and bio sensors
Multifunctional Materials Based on Graphene
Graphene Research
Graphene film on Ni/SiO2/Si 100mm dia
Highly Oriented [...]
2019-04-18meta-author
PAM XIAMEN offers SiO2+Si3N4 on Si wafer.
300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped R:0.01-0.1ohm.cm
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( [...]
2019-05-16meta-author
Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW).
To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]
2017-07-04meta-author
