PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6
Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Lifetime>1000µsec
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Orientation[110]±0.5°
Resistivity>5,000 Ωcm
TTV<10µm
Bow/Warp<40µm
Primary Flat Location@[111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat Location@[111]70.5° CW from primary flat
Front side finish [...]
2019-09-20meta-author
The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]
2022-09-27meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author
MgO single crystal substrate-1
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in [...]
2019-05-13meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
Below are the two specifications of our silicon items that are great for FTIR Spectroscopy:
1) Si 100mm low B or P doped <100>, 10,000 ohm-cm, 525um, DSP Prime
2) 150mm dia. <100> low B or P doped FZ Si DSP, >100 [...]
2019-02-26meta-author