Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

  • Home
  • News
  • Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

 

source:iopscience
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2019-06-17

Share this post

Related Posts

Silicon Ingots-2

PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm) FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]

2019-03-08meta-author
3″ Silicon Wafer-7

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-5 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type Si:P [100] ±1° 3″ 500 P/P 1-100 SEMI Prime, TTV<2μm, Empak cst n-type Si:P [100-4°] ±0.5° 3″ 500 P/E 1-20 Prime n-type Si:P [100] 3″ 650 P/P 1-10 Prime, TTV<2μm n-type Si:P [100] 3″ 1000 P/P 1-5 SEMI Prime, hard cst n-type Si:P [100] 3″ 1000 P/E 1-20 SEMI Prime n-type Si:P [100] 3″ 6000 P/E 1-20 SEMI Prime, Individual cst n-type Si:Sb [100] 3″ 300 P/E 0.02-0.04 SEMI Prime, in hard cassettes of 2 wafers n-type Si:Sb [100] 3″ 381 P/E 0.008-0.020 SEMI Prime n-type Si:As [100] 3″ 380 P/EOx 0.001-0.005 SEMI Prime, LTO Back-side seal [...]

2019-03-06meta-author
6″FZ Silicon Wafer-1

PAM XIAMEN offers 6″FZ Silicon Wafer-1 Silicon wafers, per SEMI Prime, P/E  6″Ø×675±25µm FZ p-type Si:B[110]±0.5° Ro > 1,000 Ohmcm,  One-sidepolished, backside Alkaline etched 2 Flats Sealed in Empak or equivalent cassette For more information, send us email at [email protected] and [email protected]

2020-06-11meta-author
Cr – Foil and Substrate

PAM XIAMEN offers Cr – Foil and Substrate. Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1 Polycrystal Cr  ( Chromium ) metallic substrate  Purity:   > 99.99% Substrate dimension:     10×10 x 1.0 mm,  Surface finish:   one side polished Colbat Properties Name:       [...]

2019-05-08meta-author
Test grade silicon wafers-4

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.1 ° 1 – 20 Ohmcm 150.0 ± 0.2 mm 675 ± 5 µm 60 3 6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 30 – [...]

2019-02-25meta-author
50.8mm (2 Inch) Silicon Wafers-4

PAM XIAMEN offers 50.8mm Si wafers. Please send us email at [email protected]  if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2121 p-type Si:B [110] 2″ 380 P/P FZ 130–160 1 F @ <111> only PAM2122 p-type Si:B [110] 2″ 280 P/E FZ 120–300 1 F @ <111> only PAM2123 p-type Si:B [100] 2″ 300 P/P FZ 400–1,000 Prime, NO Flats, hard cst PAM2124 p-type Si:B [100] 2″ 300 P/E FZ >50 SEMI Prime, 2Flats, hard cst PAM2125 p-type Si:B [111] 2″ 300 P/E FZ 730–1,050 SEMI Prime, [...]

2019-02-18meta-author