Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

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The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

 

source:iopscience
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2019-06-17

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