PAM XIAMEN offers LiF crystal.
LiF (100) 10x10x1.0mm, 1SP
LiF (100) 10x10x1.0mm, 2SP
LiF (111) 10x10x1.0mm, 1SP
LiF (111) 10x10x1.0mm, 2SP
LiF (110) 10x10x1.0mm, 1SP
We also can offer LiF polycrystal (PAM161011-LIF):
Diameter=15mm
Length=25mm
Purity>99.99%
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
Found in [...]
2019-05-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author
PAM XIAMEN offers LSAT Substrate.
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 or (La,Sr)(Al,Ta)O3 is a kind of mature perovskite crystal with twin-free, LAST is well matched with high temperature superconductors and various oxide materials. In a large number of practical applications, last is expected to replace LaAlO3 and [...]
2019-05-07meta-author
PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html.
SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal [...]
2024-04-19meta-author
PAM XIAMEN offers Polished silicon slab.
Size: 90X200mm
Thickness: 9±1mm
2 polished face 90 x 200mm
Flatness <1um
TTV <5um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-08-22meta-author