PAM XIAMEN offers GaN on Sapphire for RF.
1. GaN HEMT Structure on Sapphire for RF Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
/
XRD(002)FWHM
/
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
u-GaN cap layer
/
Al composition
20-30%
In composition
17% for InAlN
AlGaN barrier layer
20~30nm
AlN spacer
/
GaN [...]
2019-05-17meta-author
PAM XIAMEN offers Single crystal TeO2.
TeO2 (110) 10x10x0.5mm, 1sp
TeO2 (001) 5x5x0.3mm, 2sp
TeO2 (110) 10x10x0.5mm, 2sp
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-05-20meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
Gallium nitride semiconductors
GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now.
Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]
PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows:
1. OEM Service – Customized AlGaN-based Thin Film Epi Structure
We [...]
2022-11-22meta-author
PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates.
Formula
KTaO3
Point group
m3m
Cell parameters
0.3984nm
Melting point
1352.2 ℃
Density
7.025 g/cm3
Mohs hardness
6
Growth method
Czochralski method
Refractive index
2.226@633nm, 2.152@1539nm
Coefficient of thermal expansion
4.027 x 10-6/K
Specific heat (temperature J/(K g)
0.378
Transparent bands (nm)
380~4000
Crystal orientation
<100>, <110>, <111>
Regular size
20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request
For more information, please visit our website: [...]
2019-03-12meta-author