PAM XIAMEN offers 4″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
p-type Si:B | [110] ±0.5° | 4″ | 500 | P/E | FZ >10,000 | Prime, TTV<5μm |
p-type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1-2 | SEMI Prime |
p-type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1-2 | Prime |
p-type Si:B | [110] ±0.5° | 4″ | 200 | P/P | FZ 1-2 | SEMI Prime, Extra 8 scratched wafers in cassette free of charge |
p-type Si:B | [100] | 4″ | 220 ±10 | P/E | FZ >10,000 | SEMI Prime |
p-type Si:B | [100] | 4″ | 230 ±10 | P/E | FZ >10,000 | SEMI Prime |
p-type Si:B | [100-4° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >2,000 | SEMI Prime, TTV<5μm |
p-type Si:B | [100] | 4″ | 450 | P/P | FZ 1,000-2,000 | SEMI Prime |
p-type Si:B | [100] | 4″ | 420 | C/C | FZ 850-900 | SEMI Prime |
p-type Si:B | [100] | 4″ | 200 ±10 | P/P | FZ 100-120 | SEMI Prime |
p-type Si:B | [100] | 4″ | 250 | P/P | FZ 1-3 {0.97-1.01} | SEMI Prime, MCC Lifetime>1,000μs. |
p-type Si:B | [100-6.0° towards[111]] ±0.5° | 4″ | 350 | P/P | FZ 1-10 | SEMI Prime |
p-type Si:B | [111] ±0.5° | 4″ | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, TTV<5μm, Lifetime>1,000μs |
p-type Si:B | [111] ±0.5° | 4″ | 397 | P/E | FZ 10,000-15,000 | SEMI Prime, Backside ACID Etched |
n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000-15,000 | SEMI Prime – Primary @ <111>±0.5° – edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs |
n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000-15,000 | SEMI Prime – Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs |
n-type Si:P | [100] | 4″ | 400 ±10 | P/P | FZ 6,000-8,000 | SEMI Prime, TTV<5μm |
n-type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000-10,000 | SEMI Prime, Lifetime>1,000μs, in Empak cassettes of 2 wafers |
n-type Si:P | [100] | 4″ | 425 | C/C | FZ >5,000 | (p-type flats on n-type wafers) |
n-type Si:P | [100-1.5° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI Prime, Lifetime>980μs, in Empak |
n-type Si:P | [100] | 4″ | 500 | G/G | FZ 4,300-6,300 | SEMI, Lifetime>1,000μs, Both sides Ground |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.