PAM XIAMEN offers 4″ FZ Prime Silicon Wafer-7
4″ FZ Si wafer
N type
Orientation (100)
Thickness 500±15μm
Resistitvity>2000Ωcm
DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to [...]
2019-10-18meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-15meta-author
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the [...]
2018-09-20meta-author
Due to the wide band gap of SiC wafer, SiC does not absorb part or almost all of the visible light. The wavelength of the absorbed light depends on the band gap, the energy levels of the main impurities and the excited energy levels [...]
2021-03-05meta-author
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
2012-12-04meta-author
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]