PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um.
6″ Si wafer
DSP
N-type
<111>
thickness 500±25um
resistivity40-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01meta-author
Photoemission study of LT-GaAs
The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d [...]
PAM XIAMEN offers 8″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 8″(200.0±0.2mm) Ø×1,000±25µm,
p-type Si:B[111]±0.5°, Ro: <100 Ohmcm,
TTV<6µm, Bow<60µm, Warp<60µm,
One-side-polished, Particles: ≤10@≥0.3µm,
Back-side etched, SEMI notch,
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-02meta-author
PAM XIAMEN offers ZnTe single crystal substrate.
ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp
ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp
ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40
ZnTe, N type, (110) [...]
2019-05-21meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
PAM XIAMEN offers MoSe2 crystal.
MoSe2 is a layered material with strong in-plane bonding and weak out-of-plane interactions. These interactions lead to exfoliation into two-dimensional layers of single unit cell thickness. In addition, MoSe2 have sizable bandgaps that change from indirect to direct in [...]
2019-05-13meta-author