PAM XIAMEN offers 4″ Silicon Wafer-19 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, P/E 4″Ø×400±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
One-side-polished, back-side etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000µs.
For more polished wafer specification, please [...]
2019-11-26meta-author
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer
Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]
PAM XIAMEN offers Single-emitter LD Chip 808nm @8W.
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 350um
Output Power: 8W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
1. SPECT, γ-imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel pitch
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
+30℃~+40℃
Energy range
20KeV~700MeV
Energy resolution(22℃)
Average<6.5%@122KeV(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Defined [...]
2019-04-24meta-author
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices
The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
2017-11-16meta-author
The SOS technology uses single crystal sapphire or spinel insulator material as the substrate and grows a single crystal silicon film through a high-temperature epitaxy process to fabricate semiconductor integrated circuits. It is a kind of SOI CMOS technology. The silicon on sapphire structure [...]
2019-05-16meta-author