Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
2019-11-18meta-author
GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates [...]
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And now we show one article example as follows, who bought our wafers or service:
Article title:
The role of carbon and SiO2 in solid-state sintering of SiC
Published by:
Eran Gross;Dana Benes Dahan;Wayne D. Kaplan.
Department of [...]
2019-11-05meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser
The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials [...]
