PAM XIAMEN offers NdGaO3 Substrate.
NdGaO3 Substrate (011)
NdGaO3 (011) 10x10x0.4 mm, 1 SP
NdGaO3 (011) 10x10x0.5 mm, 1 SP
NdGaO3 (011) 2″ dia x0.5 mm, 1 SP
NdGaO3 substrates(001)
NdGaO3 (001) 5x5x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 [...]
2019-05-13meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, [...]
2018-02-13meta-author
The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12meta-author
Photolithography chrome masks are for sale. According to the different substrate materials, it can be divided into quartz mask, soda mask and others (including relief plate, film), etc. Among them, the photomask on quartz substrate and soda lime are commonly used lithography masks in [...]
2021-11-09meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
CZ
-100
1-20
4900-5100
P/E
PRIME
50.8
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-100
9900-10100
P/E
PRIME
50.8
N
Phos
FZ
-111
2k-5k
2000-5000
P/E
PRIME
50.8
N
Phos
CZ
-111
225-275
P/P
PRIME
50.8
N
Phos
CZ
-111
250-300
P/E
PRIME
50.8
N
Phos
FZ
-111
2000-5000
275-325
P/E
PRIME
50.8
N
Phos
CZ
-111
2900-3100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5950-6050
P/E
PRIME
50.8
N
Phos
FZ
-111
150-200
9900-10100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
50.8
N
Phos
CZ
-110
225-275
P/P
PRIME
50.8
N
Phos
CZ
-110
250-300
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.005-.02
275-325
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.001-.005
300-350
P/E
PRIME
50.8
P
Any
CZ
Any
Any
2400-2600
P/E
TEST
50.8
P
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
P
Boron
CZ
-100
1-20
10-30
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-02-27meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
Undoped
Undoped
Diameter:
100.0±0.2
100.0±0.2
mm
Orientation:
(100)±0.30offtoward (110)
(100)±0.30offtoward [...]
2020-05-26meta-author