GaAs(111) crystal

GaAs(111) crystal wafer

PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer:

1.Wafer List

GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 2sp
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4″ dia x 0.625 mm, 1 sp
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4″ dia x 0.625 mm, 2sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 2″ dia x 0.325mm, 1sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 2″ dia x 0.35mm, 2sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 3″ dia x 0.625 mm, 2sp
GaAs (111) orientation, P-type, Zn-doped, 2″ dia x 0.4mm, 1sp,
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.5mm, 1sp
GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp,
GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,
GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp
GaAs, Growing Method: VGF ,(111)A , Zn-doped, P-type, 2″ dia x 0.5mm, 2sp
GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2″ dia x 0.4 mm, 2sp

2.(111)GaAs Wafer Specification:

2-1 2″GaAs:350 μm, Resistivity >1E7Ohm.cm , Orientation: <111>, single side polished, Undoped

                                                                                 Specifications

Parameter Customer’s Requirements Guaranteed / Actual Values UOM
Dopant GaAs-Undoped GaAs-Undoped  
Diameter 50.7±0.1 50.7±0.1 mm
Orientation <111>±0.5° <111>±0.5°
OF Orientation EJ0-1-1±0.5° EJ0-1-1±0.5°
OF Length 17±1 17±1 mm
IF Orientation EJ0-11±0.5° EJ0-11±0.5°
IF Length 7±1 7±1 mm
Resistivity >1E7 >1E7 ohm.cm
EPD(Ave) 5000 5000 /cm2
Thickness 325~375 325~375 um
TTV N/A N/A um
TIR N/A N/A um
Bow N/A N/A um
Warp N/A N/A um
Surface P-E P-E
Packaging Single Wafer Single Wafer

 

2-2 2″GaAs:350 μm, (range,1-9E-3)Ohm.cm, Orientation: <111>, single side polished,Si doped N-type

                                                                                  Specifications

Parameter Customer’s Requirements Guaranteed / Actual Values UOM
Dopant GaAs-Si GaAs-Si
Diameter 50.8±0.2 50.8±0.2 mm
Orientation <111>±0.5° <111>±0.5°
OF Orientation EJ0-11±0.5° EJ0-11±0.5°
OF Length 17±1 17±1 mm
IF Orientation EJ-211±0.5° EJ-211±0.5°
IF Length 7±1 7±1 mm
Resistivity 1-9E-3 1-9E-3 ohm.cm
EPD(Ave) <5000 <5000 /cm2
Thickness 325~375 325~375 um
TTV <10 <10 um
TIR <10 <10 um
Bow <15 <15 um
Warp <15 <15 um
Surface P-E P-E
Packaging Single Wafer Single Wafer

 

2-3 2″GaAs:350 μm ; (range,1-9E-3)Ohm.cm ; Orientation: <111>; single side polished;Zn-doped P-type

                                                                                   Specifications

Parameter Customer’s Requirements Guaranteed / Actual Values UOM
Dopant GaAs-Zn GaAs-Zn
Diameter 50.8±0.2 50.8±0.2 mm
Orientation <111>±0.5° <111>±0.5°
OF Orientation EJ0-11±0.5° EJ0-11±0.5°
OF Length 17±1 17±1 mm
IF Orientation EJ-211±0.5° EJ-211±0.5°
IF Length 7±1 7±1 mm
Resistivity 1-9E-3 1-9E-3 ohm.cm
EPD(Ave) <5000 <5000 /cm2
Thickness 325~375 325~375 um
TTV <10 <10 um
TIR <10 <10 um
Bow <15 <15 um
Warp <15 <15 um
Surface P-E P-E
Packaging Single Wafer Single Wafer

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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