PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author
PAM XIAMEN offers Gallium Phosphate GaP Crystal and Substrate.
Main Parameters
Crystal structure
Cubic
Growth method
crystallization process
Crystal lattice parameters
a=5.642Å
Density
2.16(g/cm3)
Wave band
0.25~22.00um
Index of refraction
1.54427
T
0.9
Nf
0.0127
Surface roughness
<30A
orientation
<111>, <110>, <100>
size
10×10×2.0mm, 20*20*2.0mm, other sizes available upon request
polished
One side or double
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-12meta-author
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline).
Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished
Niobium( Nb) substrate ( Polycrystalline)
Purity: 99.5%
Size: 10x10x0.5 mm
Surface finish: One side optical polished
Surface finish (RMS or Ra) : N/A
General Properties [...]
2019-05-08meta-author
PAM-XIAMEN offers 4 inch Blue LED Wafer
Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years.
“We have established the production process based [...]
AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting [...]
You can buy single crystal AlN substrate with higher photoelectric conversion efficiency than indirect band gap semiconductors from PAM-XIAMEN. Aluminum nitride (AlN) is an important blue and ultraviolet light-emitting material, which is used in ultraviolet/deep ultraviolet light-emitting diodes, ultraviolet laser diodes, and ultraviolet detectors. [...]
2019-04-16meta-author