PAM XIAMEN offers 60+1mm FZ Si Ingot -4
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-18meta-author
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]
PAM XIAMEN offers New substrate.
GYSGG (Gd0.63Y2.37Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP
NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP
YSGG (Y3Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP
Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 24 Degree
SrTiO3 Substrate with [...]
2019-05-22meta-author
PAM XIAMEN offers La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3 .
20nmLa0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 films on Nb:SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp ,wt 0.7%
Specifications:
Film: La0.7Sr0.3MnO3 (20nm) + PbZr0.2Ti0.8O3 (100nm)
Substrate:Nb: SrTiO3 (100), wt 0.7%
Size: 5x5x0.5mm, one side polished
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-04-28meta-author
25.4 (1 inch) Silicon Wafers
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, [...]
2019-02-15meta-author
Fabrication of GaN wafers for electronic and optoelectronic devices
The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
