FZ Silicon Ignot Diameter 80+1mm-1
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more [...]
2019-07-03meta-author
Highlights
•A recessed structure was used on the GaAs/Si solar cells to reduce the current path.
•The associated series resistance was reduced by a recessed structure.
•The carrier recombination loss was improved due to pyramid-like recessed structure.
In this study, epitaxial layers of GaAs-based solar cells were grown [...]
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Physical Constants
Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific [...]
2019-02-26meta-author
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
SPECIFICATIONS:
Crystal structure: Monoclinic
Lattice parameter:
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Density: 5.95(g/cm3)
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Conductivity: Semi-insulating
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special [...]
2019-03-12meta-author
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]