Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector
A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]
Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28meta-author
N-type or P-type 125mm silicon wafer can be supplied with the orientation of <111> or <100>. More specs are shown as following:
1. 125mm Silicon Substrate Wafer List
No. 1
ID
Dia
Type
Dopant
Ori
Res
(Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2683
125mm
N
As
<111>
<0.0035
375um
SSP
MECH
Mechanical Grade. EPI Layer: N/Phos Res: 4.59-5.874ohm.cm 12-16um
PAM2684
125mm
N
P
<100>
<0.001
3000um
SSP
Test
3mm thick
PAM2685
125mm
P
B
<111>
43485
525-575um
SSP
Test
Sold As-Is
PAM2686
125mm
P
B
<111>
43485
500-550um
SSP
Test
Sold As-Is
No. 2
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
(Ωcm)
Comment
PAM2687
p-type Si:B
[100]
5″
889 [...]
2019-02-20meta-author
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
PAM XIAMEN offers Si wafers.
Our clients often use the following spec for their soft lithography applications.
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
Not only can the above silicon wafers be used for soft lithography, our clients also use the wafers for PDMS micro-fluidic chip platforms [...]
2019-02-25meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
5000
P/E
3.4-3.7
SEMI Prime, Individual cst
n-type Si:P
[100]
2″
40 ±10
P/P
1-3
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P
[100]
2″
1000
P/P
1-10
SEMI Prime
n-type Si:Sb
[100]
2″
280
P/E
0.01-0.02
SEMI Prime
n-type Si:Sb
[100]
2″
1000
P/E
0.005-0.020
SEMI Prime
n-type Si:As
[100]
2″
300
P/P
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
500
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
7000
P/E
0.001-0.005
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual [...]
2019-03-07meta-author