PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC inevitably forms various defects, which affect the performance and reliability of SiC power devices. Below, we specifically explore the impact of triangle defects on the [...]
2024-03-14meta-author
Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]
2021-06-28meta-author
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html
1. Epitaxial Pits
Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread [...]
2024-03-21meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
1. Specifications of C-Plane Sapphire Substrate
2” C-plane SSP Sapphire Substrate:
No
Item
Specification
1
Material
High PurityAl2O3
2
Diameter
50.8+0.1mm
3
Thickness
430土15um
4
TTV
≤10μm
5
LTV
≤1.5μm
6
Bow
-10~0μm
7
Warp
≤10μm
8
Primary Flat Length
16.0土1.0mm
9
Front Surface Roughness(Ra)|
Ra≤0.2nm
Back Surface Roughness(Ra)
0.7~1.2μm
11
Primary Flat Orientation
A-plane土0.2°
12
Surface Orientation
C-Plane(0001)
off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis)
13
Laser Mark
back side or frontside
14
Package
25pcs/Cassette, Vacuum-sealed, Nitrogen-
[...]
2020-05-20meta-author
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author