PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine.
CZT planar detector
1. [...]
2019-04-23meta-author
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author
Photoluminescence and Raman studies of GaN films grown by MOCVD
The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]
2013-04-01meta-author
PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following.
3″ Si wafer, R≤100Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤100Ωcm
6. Primary surface: [...]
2019-11-20meta-author
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
Layer No.
Material
Group
Repeat
Mole Fraction(x)
Strain(ppm)
PL(nm)
Thickness(nm)
Dopant
32
GaAs
–
–
–
–
–
156
C
31
Al(x)GaAs
–
–
0.04
–
–
50.5
C
30
Al(x)GaAs
–
–
0.87->0.04
–
–
20
C
29
Al(x)GaAs
–
–
0.87
–
–
59.7
C
28
Al(x)GaAs
–
16
0.04->0.87
–
–
20
C
27
Al(x)GaAs
–
0.04
–
–
51.5
C
26
Al(x)GaAs
–
0.87->0.04
–
–
20
C
25
Al(x)GaAs
–
0.87
–
–
59.7
C
24
Al(x)GaAs
–
–
0.04->0.87
–
–
20
C
23
Al(x)GaAs
–
–
0.04
–
–
32.9
C
22
Al(x)GaAs
–
–
0.80->0.04
–
–
20
C
21
Al(x)GaAs
–
–
0.98
–
–
20
C
20
Al(x)GaAs
–
–
0.8
–
–
61.6
C
19
GaAsP
–
–
–
–
–
–
UD
18
In(x)GaAs
–
–
–
–
970nm
–
UD
17
GaAsP
–
–
–
–
–
–
UD
16
In(x)GaAs
–
–
–
–
970nm
–
UD
15
GaAsP
–
–
–
–
–
–
UD
14
In(x)GaAs
–
–
–
–
970nm
–
UD
13
GaAsP
–
–
–
–
–
–
UD
12
Al(x)GaAs
–
–
0.87
–
–
59.7
Si
11
Al(x)GaAs
–
–
0.04->0.87
–
–
20
Si
10
Al(x)GaAs
–
–
0.04
–
–
51.5
Si
9
Al(x)GaAs
–
–
0.87->0.04
–
–
20
Si
8
Al(x)GaAs
–
6
0.87
–
–
59.7
Si
7
Al(x)GaAs
–
0.04->0.87
–
–
20
Si
6
Al(x)GaAs
–
0.04
–
–
51.5
Si
5
Al(x)GaAs
–
30
0.92->0.04
–
–
20
Si
4
Al(x)GaAs
–
0.92
–
–
59.8
Si
3
Al(x)GaAs
–
0.04->0.92
–
–
20
Si
2
Al(x)GaAs
–
0.04
–
–
51.5
Si
1
GaAs
–
–
–
–
–
500
Si
4 inch GaAs substrate Si doped; [...]
2021-04-02meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-04meta-author