PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
For more information, please visit our [...]
There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available:
1. Specifications of 100mm Silicon Carbide 4H N-type
Specificationsof Silicon Carbide N-type 100mm Diameter –
N-type SiC substrate
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
Crystal structure: Monoclinic
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm，Ф1″ (1 inch diameter). Special [...]
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
PAM XIAMEN offers MgF2 crystal.
MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications
a = 4.64
13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c
c = 3.06