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InGaAs/InP epi wafer for PIN
 
We can offer 2" InGaAs/InP epi wafer for PIN as follows:
 
InP Substrate:
InP Orientation: (100)
Doped with Fe, Semi-Insulating
wafer Size: 2" diameter
Resistivity:>1x10^7)ohm.cm
EPD:<1x10^4 /cm^2
Single side polished.
 
EPI layer :
InxGa1-xAs
Nc>2x10^18 /cc (using Si as dopant),
Thickness :0.5 um (+/- 20%)
Roughness of epi-layer, Ra<0.5nm
 
Source: PAM-XIAMEN
 
If you need more information about InGaAs/InP epi wafer for PIN, please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.