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Silicon Epitaxy

Silicon Epitaxy

Silicon Epitaxy is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer
Item Description

Silicon Epitaxy

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure.

Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-,  N/P/P+, P/P+, P-/P/P+.

Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.

We can offer wafer diameter 2",4",6",8",10"size.now we offer 6" specs for your reference.

6" Wafer specification:

Item

Specification

 
 

Substrate

Sub spec No.

 

 

Ingot growth method

CZ

 

Conductivity type

N

 

Dopant

As

 

Orientation

(100)±0.5°

 

Resistivity

0.005Ohm.cm

 

RRG

15%

 

[Oi] Content

818 ppma

 

Diameter

150±0.2mm

 

Primary Flat Length

55~60 mm

 

Primary Flat Location

{110}±1°

 

Secondly Flat Length

semi

 

Secondly Flat Location

semi

 

Thickness

625±15 μm

 

Backside Characteristics

 

 

1BSD/Poly-Si(Å)

1.      BSD

 

2SIO2

2.      LTO: 5000±500 Å

 

3Edge Exclusion

3.      EE: ≤0.6mm

 

Laser Marking

NONE

 

Front surface

Mirror polished

 

Epi

Structure

N/N+

 

Dopant

Phos

 

Thickness

3±0.2 μm

 

Thk. Uniformity

5 %

 

Measurement Position

Center (1 pt) 10mm from edge (4 pts @ 90 degrees)

 

Calculation

[Tmax – Tmin] ÷ [Tmax + Tmin] x 100%

 

Resistivity

2.5±0.2 Ohm.cm

 

Res. Uniformity

5 %

 

Measurement Position

Center (1 pt) 10mm from edge (4 pts @ 90 degrees)

 

Calculation

[Rmax – Rmin] ÷[Rmax + Rmin] x 100%

 

Stack faults Density

2 (ea/cm2)

 

Haze

NONE

 

Scratches

NONE

 

Craters Orange Peel

NONE

 

Cracks Crow’s Feet

 

Edge Chips

NONE

 

Edge Crown

≤1/3 Epi thickness

 

Slip (mm)

Total Length ≤ 1Dia.

 

Foreign Matter

NONE

 

Back Surface

NONE

 

Contamination

 

Total Point Defects(particle)

≤30@0.3um

 

  


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