PAM XIAMEN offers Bi12GeO20 (BGO20).
Bi12GeO20 – BGO20 (001) 10x5x1.0 mm 1 side polished
Features:
Crystal Bi12GeO20 ( BGO20) — New generation acousto-optic crystal Wafer size: 10 x 5 x1.0 mm thick
Orientation: (001) +/-0.5o
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 sides polished
Package: Each wafer is packed in [...]
2019-04-17meta-author
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
PAM XIAMEN offers Pyrolytic Graphite Substrate.
Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an [...]
2019-04-18meta-author
PAM XIAMEN offers 450mm Silicon Wafers.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
2019-02-20meta-author
PAM XIAMEN offers Silicon wafers.
We are often asked how many silicon wafers are produced annually.
The answer depends on a more specific question including:
What Diameter
What Country or Entire World
Semiconductor or Solar industries or both
Monitor Grade, Test Grade, Prime Grade
Above are just some terms that need [...]
2019-02-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author