2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
5-4-4-3 SiC Epilayer Doping In-situ doping during CVD epitaxial growth is primarily accomplished through the introduction of nitrogen (usually) for n-type and aluminum (usually trimethyl- or triethylaluminum) for p-type epilayers . Some alternative dopants such as phosphorus and boron have also been investigated for the [...]
3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
Total Thickness Variation (TTV): The maximum variation in the wafer thickness. Total Thickness Variation is generally determined by measuring the wafer in 5 locations of a cross pattern (not too close to the wafer edge) and calculating the maximum measured difference in thickness. The [...]
5-6-5 SiC MicroElectromechanical Systems (MEMS) and Sensors As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic [...]
5-5-2 SiC-Selective Doping: Ion Implantation The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated long term at high temperatures. Unfortunately, this characteristic also largely [...]
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