2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
2-11.Edge Chips Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.
2-18.Grain boundaries They are interfaces where crystals of different orientations meet. A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation. The term “crystallite boundary” is sometimes, though rarely, used. Grain boundary areas contain those [...]
5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially [...]
5-5-1 Choice of Polytype for Devices As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
