PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES. Nd:GGG (neodymium doped gadolinium gallium garnet) Chemical formula: Nd:Gd3Ga5O12 Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to [...]
PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 1.0±0.03mm Item Unit Value Test Standard 1)Colour —- Gray 3.2 2)Density g/cm³ ≥3.33 GB/T 2413 3)Thermal Conductivity 20℃,W/(m·K) ≥170 GB/T 5598 4)Dielectric Constant 1MHz 8~10 GB/T 5594.4 5)Dielectric Strength KV/mm ≥17 GB/T 5593 6)Flexural Strength MPa ≥450 GB/T 5593 7)Camber Length‰ ≤2‰ 8)Surface roughness Ra μm 0.3~0.6 GB/T 6062 9)Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃,Ω.cm ≥1013 GB/T 5594.5 11)Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5 For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html 1. Epitaxial Pits Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread [...]
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm 4inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 101.6mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished. Back side: lapped-etched For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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